參數(shù)資料
型號： S29GL128M90TDIR80
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù)： 111/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90TDIR80
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
111
P r e l i m i n a r y
Figure 6. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 μs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5
μ
s
(
maximum of 20
μ
s) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to
the erase-suspend-read mode. The system can determine the status of the pro-
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table
31
and Table
32
for program command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb （16M x 8，8M x 16） 寫周期時間 - 字，頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標準包裝:91
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