參數(shù)資料
型號: S29GL128M90TDIR13
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 79/160頁
文件大?。?/td> 2142K
代理商: S29GL128M90TDIR13
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
79
P r e l i m i n a r y
Table 14. Autoselect Codes, (High Voltage Method)
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, SA = Sector Address, X = Don’t care.
Sector Group Protection and Unprotection
The hardware sector group protection feature disables both program and erase
operations in any sector group. In this device, a sector group consists of four ad-
jacent sectors that are protected or unprotected at the same time (see
Table 4
).
The hardware sector group unprotection feature re-enables both program and
erase operations in previously protected sector groups. Sector group protection/
unprotection can be implemented via two methods.
Sector protection/unprotection requires V
ID
on the RESET# pin only, and can be
implemented either in-system or via programming equipment. Figure 2 shows
the algorithms and Figure 24 shows the timing diagram. This method uses stan-
Description
CE
#
OE#
WE
#
A2
2t
o
A1
5
A1
4
to
A1
0
A9
A8
to
A7
A6
A
5
to
A
4
A
3
to
A
2
A
1
A
0
DQ8 to DQ15
BYTE
# =
V
IH
DQ7 to DQ0
Model Number
BYTE#
= V
IL
R0
R1,R2
R3,R4
R5,R6
,R7
Manufacturer ID
:
Spansion
Products
L
L
H
X
X
V
ID
X
L
X
L
L
L
00
X
01h
01h
01h
01h
S
Cycle 1
L
L
H
X
X
V
ID
X
L
X
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
12h
Cycle 3
H
H
H
22
X
01h
S
Cycle 1
L
L
H
X
X
V
ID
X
L
X
L
L
H
22
X
7Eh
Cycle 2
H
H
L
22
X
12h
Cycle 3
H
H
H
22
X
00h
S
Cycle 1
L
L
H
X
X
V
ID
X
L
X
L
L
H
22
X
7Eh
7Eh
7Eh
7Eh
Cycle 2
H
H
L
22
X
13h
0Ch
10h
13h
Cycle 3
H
H
H
22
X
00h
01h
00h (-R4, bottom
boot)
01h (-R3, top
boot)
01h
S
Cycle 1
L
L
H
X
X
V
ID
X
L
X
L
L
H
22
X
7Eh
7Eh
7Eh
Cycle 2
H
H
L
22
X
1Ch
1Dh
1Ah
Cycle 3
H
H
H
22
X
00h
00h
00h (-R4, bottom
boot)
01h (-R3, top
boot)
Sector Group
Protection
Verification
L
L
H
SA
X
V
ID
X
L
X
L
H
L
X
X
01h (protected),
00h (unprotected)
SecSi Sector
Indicator Bit
(DQ7), WP#
protects highest
address sector
L
L
H
X
X
V
ID
X
L
X
L
H
H
X
X
98h (factory locked),
18h (not factory locked)
SecSi Sector
Indicator Bit
(DQ7), WP#
protects lowest
address sector
L
L
H
X
X
V
ID
X
L
X
L
H
H
X
X
88h (factory locked),
08h (not factory locked)
相關(guān)PDF資料
PDF描述
S29GL128M90TDIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR80 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90TDIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術(shù):FLASH - NOR 存儲容量:128Mb (16M x 8,8M x 16) 寫周期時間 - 字,頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 安裝類型:表面貼裝 封裝/外殼:56-TFSOP(0.724",18.40mm 寬) 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91