參數(shù)資料
型號： S29GL128M90FFIR20
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): -60; ID (A): -2; Pch : 1.25; RDS (ON) typ. (ohm) @10V: 0.245; RDS (ON) typ. (ohm) @4V[4.5V]: [0.31]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 290; toff (µs) typ: 0.037; Package: CMFPAK-6
中文描述： 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 141/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90FFIR20
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
141
P r e l i m i n a r y
AC Characteristics
Alternate CE# Controlled Erase and Program Operations-S29GL032M
Notes:
1.
2.
3.
4.
Not 100% tested.
See the “Erase and Programming Performance” section for more information.
For 1–16 words/1–32 bytes programmed.
If a program suspend command is issued within t
, the device requires t
before reading status data, once programming has resumed
(that is, the program resume command has been written). If the suspend command was issued after t
POLL
, status data is available
immediately after programming has resumed. See Figure 23.
Parameter
Speed Options
Unit
JEDEC
Std.
Description
90
10
11
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
35
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
25
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
μs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
t
RH
RESET# High Time Before Write
Min
50
ns
t
POLL
Program Valid before Status Polling (Note 4)
Max
4
μs
相關(guān)PDF資料
PDF描述
S29GL128M90FFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR80 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
S29GL128M90FFIR82 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*