參數(shù)資料
型號： S29GL128M90FFIR10
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 8M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù)： 143/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90FFIR10
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
143
P r e l i m i n a r y
Erase And Programming Performance
Notes:
1.
2.
3.
4.
5.
6.
7.
Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
Under worst case conditions of 90
°
C; Worst case V
CC
, 100,000 cycles.
Effective programming time (typ) is 15
μ
s (per word), 7.5
μ
s (per byte).
Effective accelerated programming time (typ) is 12.5
μ
s (per word), 6.3
μ
s (per byte).
Effective write buffer specification is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
System-level overhead is the time required to execute the command sequence(s) for the program command. See Tables 31 and 32 for
further information on command definitions.
Parameter
Typ (Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes
00h
programm
ing prior to
erasure
Note (6)
Chip Erase Time
S29GL032M
32
64
sec
S29GL064M
64
128
S29GL128M
128
256
S29GL256M
256
512
Total Write Buffer Program Time Notes (3), (5)
240
μs
Excludes
system
level
overhead
Note (7)
Total Accelerated Effective Write Buffer Program Time Notes (4),
(5)
200
μs
Chip Program Time
S29GL032M
31.5
sec
S29GL064M
63
S29GL128M
126
S29GL256M
252
相關(guān)PDF資料
PDF描述
S29GL128M90FFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR20 MOSFET, Switching; VDSS (V): -60; ID (A): -2; Pch : 1.25; RDS (ON) typ. (ohm) @10V: 0.245; RDS (ON) typ. (ohm) @4V[4.5V]: [0.31]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 290; toff (µs) typ: 0.037; Package: CMFPAK-6
S29GL128M90FFIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR23 MOSFET, Switching; VDSS (V): -60; ID (A): -6; Pch : 3; RDS (ON) typ. (ohm) @10V: 0.04; RDS (ON) typ. (ohm) @4V[4.5V]: [0.06]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2300; toff (µs) typ: 0.055; Package: SOP-8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
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