參數(shù)資料
型號： S29GL128M90FDIR82
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述： 3.0伏只頁面模式閃存具有0.23微米工藝技術的MirrorBit
文件頁數(shù)： 22/160頁
文件大?。?/td> 2142K
代理商： S29GL128M90FDIR82
22
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Ordering Information-S29GL032M
S29GL032M Standard Products
Standard products are available in several packages and operating ranges. The
order number (Valid Combination) is formed by a combination of the following:
S29GL032M
10
T
A
I
R1
2
PACKAGE TYPE
0
= Tray
2
= 7” Tape and Reel
3
= 13” Tape and Reel
MODEL NUMBER
R0
= x8, V
CC
=3.0-3.6V, Uniform sector device
R1
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, highest address sector
protected when WP#/ACC=V
IL
R2
= x8/x16, V
CC
=3.0-3.6V, Uniform sector device, lowest address sector
protected when WP#/ACC=V
IL
R3
= x8/x16, V
CC
=3.0-3.6V, Top boot sector device, top two address sectors
protected when WP#/ACC=V
IL
R4
= x8/x16, V
CC
=3.0-3.6V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC=V
IL
R5
= x8/x16, V
CC
=3.0-3.6V, Top boot sector device, top two address sectors
protected when WP#/ACC=V
IL,
BGA-48P-M20 package only
R6
= x8/x16, V
CC
=3.0-3.6V, Bottom boot sector device, bottom two
address sectors protected when WP#/ACC=V
IL
BGA-48P-M20 package
only
TEMPERATURE RANGE
I
= Industrial (–40
°
C to +85
°
C)
PACKAGE MATERIAL SET
A
= Standard
F
= Pb-Free
B
= Standard
C
= Pb-Free
PACKAGE TYPE
T
= Thin Small Outline Package (TSOP) Standard Pinout
B
= Fine-pitch Ball-Grid Array Package
F
= Fortified Ball-Grid Array Package
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
S29GL032M
32 Megabit Page-Mode Flash Memory Manufactured using 0.23 um MirrorBit
TM
Process Technology, 3.0 Volt-only Read, Program, and Erase
相關PDF資料
PDF描述
S29GL128M90FDIR83 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR10 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR12 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR13 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL128M90FFIR20 MOSFET, Switching; VDSS (V): -60; ID (A): -2; Pch : 1.25; RDS (ON) typ. (ohm) @10V: 0.245; RDS (ON) typ. (ohm) @4V[4.5V]: [0.31]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 290; toff (µs) typ: 0.037; Package: CMFPAK-6
相關代理商/技術參數(shù)
參數(shù)描述
S29GL128M90TAIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128M90TAIR13 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 90NS 56TSOP - Tape and Reel
S29GL128M90TFIR10 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 90ns 56-Pin TSOP Tray
S29GL128N10FFI010 制造商:Spansion 功能描述:NOR Flash Parallel 3V/3.3V 128Mbit 16M/8M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray 制造商:Spansion 功能描述:MIRRORBIT FLASH 128MB SMD 29LV128
S29GL128N10FFI020 制造商:Spansion 功能描述:Flash - NOR IC
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