參數(shù)資料
型號(hào): S29GL064N90TFI042
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù): 70/79頁(yè)
文件大?。?/td> 2191K
代理商: S29GL064N90TFI042
70
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 15.9
Toggle Bit Timings (During Embedded Algorithms)
Note
VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array
data read cycle.
Figure 15.10
DQ2 vs. DQ6
Note
DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CE# to toggle DQ2 and DQ6.
OE#
CE#
WE#
Addresses
t
OEH
t
DH
t
AHT
t
ASO
t
OEPH
t
CE
Valid Data
(first read)
(second read)
(stops toggling)
t
CEPH
t
AHT
t
AS
DQ6 / DQ2
Valid Data
Valid
Status
Valid
Status
Valid
Status
RY/BY#
Enter
Erase
Erase
Resume
Erase
Enter Erase
Suspend Program
Erase Suspend
Read
Erase Suspend
Read
Erase
Suspend
Program
WE#
DQ6
DQ2
Erase
Complete
Erase
Suspend
Embedded
Erasing
相關(guān)PDF資料
PDF描述
S29GL064N90TFI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFI062 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAI010 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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