參數(shù)資料
型號(hào)： S29GL064N90FAI030
廠商： SPANSION LLC
元件分類(lèi)： DRAM
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁(yè)數(shù)： 46/79頁(yè)
文件大?。?/td> 2191K
代理商： S29GL064N90FAI030
46
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 10.2
Program Operation
Note
See
Table 10.1 on page 51
and
Table 10.3 on page 53
for program command sequence.
10.5
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer
programming operation so that data can be read from any non-suspended sector. When the Program
Suspend command is written during a programming process, the device halts the program operation within
20
μ
s maximum and updates the status bits. Addresses are not required when writing the Program Suspend
command.
After the programming operation is suspended, the system can read array data from any non-suspended
sector. The Program Suspend command may also be issued during a programming operation while an erase
is suspended. In this case, data may be read from any addresses not in Erase Suspend or Program Suspend.
If a read is needed from the Secured Silicon Sector area (One-time Program area), then user must use the
proper command sequences to enter and exit this region. Note that the Secured Silicon Sector, autoselect,
and CFI functions are unavailable when a program operation is in progress.
The system may also write the autoselect command sequence when the device is in the Program Suspend
mode. The system can read as many autoselect codes as required. When the device exits the autoselect
mode, the device reverts to the Program Suspend mode, and is ready for another valid operation. See
Autoselect Command Sequence
on page 42
for more information.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard
program operation. See
Write Operation Status
on page 55
for more information.
The system must write the Program Resume command (address bits are don’t care) to exit the Program
Suspend mode and continue the programming operation. Further writes of the Resume command are
ignored. Another Program Suspend command can be written after the device resumes programming.
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相關(guān)PDF資料
PDF描述
S29GL064N90FAI032 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFI042 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFI062 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90FFI070 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N90FAI040 制造商:Spansion 功能描述:FLASH MEM PARALLEL 3V/3.3V 64M-BIT 8M X 8/4M X 16 - Trays
S29GL064N90FFI010 功能描述:閃存 64M 3.0V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90FFI010 制造商:Spansion 功能描述:IC FLASH 64M 3V 90NS FBGA64
S29GL064N90FFI012 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 64BGA - Tape and Reel
S29GL064N90FFI020 功能描述:閃存 64MB 2.7-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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