參數(shù)資料
型號： S29GL064N90BFI070
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述： 64兆，32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù)： 73/79頁
文件大?。?/td> 2191K
代理商： S29GL064N90BFI070
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
73
D a t a
S h e e t
16. Erase And Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0V, 10,000 cycles; checkerboard data pattern.
2. Under worst case conditions of 90
°
C; Worst case V
CC
, 100,000 cycles.
3. Programming time (typ) is 15
μ
s (per word), 7.5
μ
s (per byte).
4. Accelerated programming time (typ) is 12.5
μ
s (per word), 6.3
μ
s (per byte).
5. Write buffer Programming time is calculated on a per-word/per-byte basis for a 16-word/32-byte write buffer operation.
6. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
7. System-level overhead is the time required to execute the command sequence(s) for the program command. See
Table 10.1 on page 51
and
Table 10.3
on page 53
for further information on command definitions.
Notes
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ
(Note 1)
Max
(Note 2)
Unit
Comments
Sector Erase Time
0.5
3.5
sec
Excludes 00h
programming prior
to erasure
(Note 6)
Chip Erase Time
S29GL032N
32
64
S29GL064N
64
128
Total Write Buffer Program Time (Notes
3
,
5
)
240
μs
Excludes system
level overhead
(Note 7)
Total Accelerated Effective Write Buffer Program Time (Notes
4
,
5
)
200
Chip Program Time
S29GL032N
31.5
sec
S29GL064N
63
Table 16.1
TSOP Pin and BGA Package Capacitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
10
pF
BGA
TBD
TBD
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
6
12
pF
BGA
TBD
TBD
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
6
10
pF
BGA
TBD
TBD
pF
C
IN3
#RESET, #WP/ACC Pin Capacitance
V
IN
= 0
TSOP
27
30
pF
BGA
TBD
TBD
pF
相關(guān)PDF資料
PDF描述
S29GL064N90BFI072 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064N90DAI010 制造商:Spansion 功能描述:64M FLASH MEMORY - Trays
S29GL064N90DFI010 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI020 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI030 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
S29GL064N90DFI040 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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