參數(shù)資料
型號: S29GL064N90BAI032
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: 8.15 X 6.15 MM, FBGA-48
文件頁數(shù): 72/79頁
文件大小: 2191K
代理商: S29GL064N90BAI032
72
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 15.11
Alternate CE# Controlled Write (Erase/Program) Operation Timings
Notes
1. Figure indicates last two bus cycles of a program or erase operation.
2. PA = program address, SA = sector address, PD = program data.
3. DQ7# is the complement of the data written to the device. D
OUT
is the data written to the device.
4. Illustration shows device in word mode.
t
GHEL
t
WS
OE#
CE#
WE#
RESET#
t
DS
Data
t
AH
Addresses
t
DH
t
CP
DQ7#
D
OUT
t
WC
t
AS
t
CPH
PA
Data# Polling
PBD for program
55 for erase
t
RH
t
WHWH1 or 2
RY/BY#
t
WH
29 for program buffer to flash
30 for sector erase
10 for chip erase
PBA for program
2AA for erase
SA for program buffer to flash
SA for sector erase
555 for chip erase
t
BUSY
相關(guān)PDF資料
PDF描述
S29GL064N90BAI040 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI042 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI062 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BAI070 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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