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參數(shù)資料
| 型號(hào)： | S29GL064N90BAI030 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 90 ns, PBGA48 |
| 封裝： | 8.15 X 6.15 MM, FBGA-48 |
| 文件頁(yè)數(shù)： | 78/79頁(yè) |
| 文件大小： | 2191K |
| 代理商： | S29GL064N90BAI030 |
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78
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
18. Revision History
Section
Description
Revision 01 (February 12, 2007)
Initial release.
Revision 02 (February 26, 2007)
Global
Replaced LAE064 package with LAA064.
Page Mode Read
Corrected bit ranges in first paragraph.
Erase And Programming Performance
Modified maximum sector erase time in table.
Revision 03 (March 15, 2007)
Connection Diagrams
64-ball Fortified BGA (LAA 064) figure:
Changed inputs for balls F1 and F7.
Revision 04 (July 6, 2007)
Ordering Information
Removed regulated V
CC
range and replaced 90 ns with 110 ns for low V
IO
option
Added Note 4 to PACKAGE MATERIAL SET Standard option
Sector Addresses table
Corrected a table
TSOP Pin and BGA Package
Capacitance
Added values for TSOP
Revision 05 (August 10, 2007)
Ordering Information
Removed leaded parts
CFI Table
Altered Erase Block Region 1 & 2
Revision 06 (September 18, 2007)
Global
Change document status to Full Production
Removed 70ns access speed
Command Definitions (x16 mode) Table
Corrected addresses for Program operation
Command Definitions (x8 mode) Table
Corrected addresses for Program operation
Revision 07 (October 22, 2007)
Global
Removed VID (12V) Sector protect & unprotect features
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 45hex
Revision 08 (November 2, 2007)
Primary Vendor-Specific Extended
Query Table
Updated the data of CFI address 2D hex thru 34 hex.
S29GL064N (Model 04) Bottom Boot
Sector Addresses Table
Updated S29GL064N (Model 04) Bottom Boot Sector Addresses
Revision 09 (November 16, 2007)
Erase and Program Operations Table
Changed t
DS
from 45 ns to 35 ns
相關(guān)PDF資料 |
PDF描述 |
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| S29GL064N90BAI032 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAI040 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAI042 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAI060 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N90BAI062 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064N90BAI040 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 48FBGA - Trays |
| S29GL064N90BFI030 | 功能描述:閃存 64MB 2.7-3.6V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N90BFI033 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 64MBIT 8MX8/4MX16 90NS 64BGA - Tape and Reel |
| S29GL064N90BFI040 | 功能描述:閃存 64Mb 3V 90ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類(lèi)型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類(lèi)型: 接口類(lèi)型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N90BFI042 | 制造商:Spansion 功能描述: |
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