參數(shù)資料
型號: S29GL064N90BAI020
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù): 67/79頁
文件大小: 2191K
代理商: S29GL064N90BAI020
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
67
D a t a
S h e e t
Notes
1. Not 100% tested.
2. See the
Erase And Programming Performance on page 73
for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once programming resumes (that is, the program
resume command is written). If the suspend command was issued after t
POLL
, status data is available immediately after programming resumes. See
Figure 15.5
on page 68
.
Table 15.3
Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
110
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
240
μs
Single Word Program Operation
(Note 2)
Typ
60
Accelerated Single Word Program Operation
(Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time
(Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time
(Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
110
ns
相關(guān)PDF資料
PDF描述
S29GL064N90BFI030 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI032 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI040 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI042 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90BFI060 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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