參數(shù)資料
型號(hào): S29GL064N11TFIV22
廠商: SPANSION LLC
元件分類(lèi): DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 110 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁(yè)數(shù): 63/79頁(yè)
文件大小: 2191K
代理商: S29GL064N11TFIV22
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
63
D a t a
S h e e t
14. Test Conditions
Figure 14.1
Test Setup
Note
Diodes are IN3064 or equivalent.
14.1
Key to Switching Waveforms
Figure 14.2
Input Waveforms and Measurement Levels
Table 14.1
Test Specifications
Test Condition
All Speeds
Unit
Output Load
1 TTL gate
Output Load Capacitance, C
L
(including jig capacitance)
30
pF
Input Rise and Fall Times
5
ns
Input Pulse Levels
0.0 or V
IO
V
Input timing measurement reference levels
0.5 V
IO
V
Output timing measurement reference levels
0.5 V
IO
V
2.7 k
Ω
C
L
6.2 k
Ω
3.3 V
Device
Under
Test
Waveform
Inputs
Outputs
Steady
Changing from H to L
Changing from L to H
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
VCC
0.0 V
Output
Measurement Level
Input
0.5 V
IO
0.5 V
IO
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