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參數(shù)資料
| 型號(hào)： | S29GL064N11TAI070 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆位3.0伏只頁(yè)面模式閃存具有110納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 67/79頁(yè) |
| 文件大小： | 2191K |
| 代理商： | S29GL064N11TAI070 |
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November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
67
D a t a
S h e e t
Notes
1. Not 100% tested.
2. See the
Erase And Programming Performance on page 73
for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once programming resumes (that is, the program
resume command is written). If the suspend command was issued after t
POLL
, status data is available immediately after programming resumes. See
Figure 15.5
on page 68
.
Table 15.3
Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
110
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
240
μs
Single Word Program Operation
(Note 2)
Typ
60
Accelerated Single Word Program Operation
(Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time
(Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time
(Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
110
ns
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| S29GL064N11TAI072 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TAIV10 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TAIV12 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TAIV20 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TAIV22 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064N11TAIV20 | 制造商:Spansion 功能描述:IC 64M PAGE-MODE FLASH MEMORY - Trays 制造商:Spansion 功能描述:SPZS29GL064N11TAIV20 PG-MODE FLASH MEM |
| S29GL064N11TFIV10 | 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N11TFIV13 | 制造商:Spansion 功能描述:FLASH MEMORY - Trays |
| S29GL064N11TFIV20 | 功能描述:閃存 64MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N11TFIV73 | 制造商:Spansion 功能描述:64M (4MX16) 3V REG, MIRRORBIT, FBGA63, IND - Tape and Reel |
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