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| 型號(hào)： | S29GL064N11FFIV62 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆位3.0伏只頁(yè)面模式閃存具有110納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 71/79頁(yè) |
| 文件大?。?/td> | 2191K |
| 代理商： | S29GL064N11FFIV62 |
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November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
71
D a t a
S h e e t
Notes
1. Not 100% tested.
2. See the
Erase And Programming Performance on page 73
for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once programming resumes (that is, the program
resume command is written). If the suspend command was issued after t
POLL
, status data is available immediately after programming resumes. See
Figure 15.11
on page 72
.
Table 15.4
Alternate CE# Controlled Erase and Program Operations
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
110
t
AVAV
t
AVWL
t
ELAX
t
DVEH
t
EHDX
t
GHEL
t
WLEL
t
EHWH
t
ELEH
t
EHEL
t
WC
t
AS
t
AH
t
DS
t
DH
t
GHEL
t
WS
t
WH
t
CP
t
CPH
Write Cycle Time
(Note 1)
Min
90
110
ns
Address Setup Time
Min
0
ns
Address Hold Time
Min
45
ns
Data Setup Time
Min
45
ns
Data Hold Time
Min
0
ns
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
WE# Setup Time
Min
0
ns
WE# Hold Time
Min
0
ns
CE# Pulse Width
Min
35
ns
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
240
μs
Single Word Program Operation
(Note 2)
Typ
60
Accelerated Single Word Program Operation
(Note 2)
Typ
54
t
WHWH2
t
WHWH2
t
RH
Sector Erase Operation
(Note 2)
Typ
0.5
sec
RESET# High Time Before Write
Min
50
ns
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