- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385798 > S29GL064N11FFIV22 (SPANSION LLC) 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology PDF資料下載
參數(shù)資料
| 型號： | S29GL064N11FFIV22 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| 中文描述： | 4M X 16 FLASH 3V PROM, 110 ns, PBGA64 |
| 封裝： | 13 X 11 MM, LEAD FREE, FBGA-64 |
| 文件頁數(shù)： | 18/79頁 |
| 文件大?。?/td> | 2191K |
| 代理商： | S29GL064N11FFIV22 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁當前第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁
18
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
8.2.1
Page Mode Read
The device is capable of fast page mode read and is compatible with the page mode Mask ROM read
operation. This mode provides faster read access speed for random locations within a page. The page size of
the device is 8 words/16 bytes. The appropriate page is selected by the higher address bits A(max)–A3.
Address bits A2–A0 in word mode (A2–A-1 in byte mode) determine the specific word within a page. This is
an asynchronous operation; the microprocessor supplies the specific word location.
The random or initial page access is equal to t
ACC
or t
CE
and subsequent page read accesses (as long as the
locations specified by the microprocessor falls within that page) is equivalent to t
PACC
. When CE# is
deasserted and reasserted for a subsequent access, the access time is t
ACC
or t
CE
. Fast page mode
accesses are obtained by keeping the
read-page addresses
constant and changing the
intra-read page
addresses.
8.3
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and CE# to V
IL
, and OE# to V
IH
.
The device features an
Unlock Bypass
mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a word, instead of four. The
Word
Program Command Sequence
on page 42
contains details on programming data to the device using both
standard and Unlock Bypass command sequences.
An erase operation can erase one sector, multiple sectors, or the entire device. Tables
8.2
–
8.8
indicate the
address space that each sector occupies.
Refer to the DC Characteristics table for the active current specification for the write mode. The AC
Characteristics section contains timing specification tables and timing diagrams for write operations.
8.3.1
Write Buffer
Write Buffer Programming allows the system write to a maximum of 16 words/32 bytes in one programming
operation. This results in faster effective programming time than the standard programming algorithms.
8.3.2
Accelerated Program Operation
The device offers accelerated program operations through the ACC function. This is one of two functions
provided by the WP#/ACC or ACC pin, depending on model number. This function is primarily intended to
allow faster manufacturing throughput at the factory.
If the system asserts V
HH
on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors, and uses the higher voltage on the pin to reduce the
time required for program operations. The system would use a two-cycle program command sequence as
required by the Unlock Bypass mode. Removing V
HH
from the WP#/ACC or ACC pin, depending on model
number, returns the device to normal operation.
Note that the WP#/ACC or ACC pin must not be at V
HH
for
operations other than accelerated programming, or device damage may result. WP# contains an internal
pullup; when unconnected, WP# is at V
IH
.
8.3.3
Autoselect Functions
If the system writes the autoselect command sequence, the device enters the autoselect mode. The system
can then read autoselect codes from the internal register (which is separate from the memory array) on DQ7–
DQ0. Standard read cycle timings apply in this mode. Refer to
Autoselect Mode
on page 29
and
Autoselect
Command Sequence
on page 42
for more information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064N11FFIV60 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11FFIV62 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TFI012 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TFI020 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
| S29GL064N11TFI022 | 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064N11TAIV20 | 制造商:Spansion 功能描述:IC 64M PAGE-MODE FLASH MEMORY - Trays 制造商:Spansion 功能描述:SPZS29GL064N11TAIV20 PG-MODE FLASH MEM |
| S29GL064N11TFIV10 | 功能描述:閃存 64Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N11TFIV13 | 制造商:Spansion 功能描述:FLASH MEMORY - Trays |
| S29GL064N11TFIV20 | 功能描述:閃存 64MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| S29GL064N11TFIV73 | 制造商:Spansion 功能描述:64M (4MX16) 3V REG, MIRRORBIT, FBGA63, IND - Tape and Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。