參數(shù)資料
型號: S29GL064N11FFIV10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FBGA-64
文件頁數(shù): 49/79頁
文件大?。?/td> 2191K
代理商: S29GL064N11FFIV10
November 16, 2007 S29GL-N_01_09
S29GL-N MirrorBit
Flash Family
49
D a t a
S h e e t
Figure 10.4
Erase Operation
Notes
1. See
Table 10.1
and
Table 10.3
for program command sequence.
2. See the section on DQ3 for information on the sector erase timer.
S
TART
Write Er
as
e
Comm
a
nd
S
e
qu
ence
(Note
s
1, 2)
D
a
t
a
Poll to Er
as
ing
B
a
nk from
S
y
s
tem
D
a
t
a
= FFh
No
Ye
s
Er
asu
re Completed
Em
b
edded
Er
as
e
a
lgorithm
in progre
ss
相關(guān)PDF資料
PDF描述
S29GL064N11FFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11FFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11TFI012 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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S29GL064N11TFIV13 制造商:Spansion 功能描述:FLASH MEMORY - Trays
S29GL064N11TFIV20 功能描述:閃存 64MB 2.7-3.6V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel