參數(shù)資料
型號(hào): S29GL064N11BAI072
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 64兆,32兆位3.0伏只頁面模式閃存具有110納米MirrorBit工藝技術(shù)
文件頁數(shù): 16/79頁
文件大?。?/td> 2191K
代理商: S29GL064N11BAI072
16
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
7.
Ordering Information–S29GL064N
S29GL064N Standard Products
Standard products are available in several packages and operating ranges. The order number (Valid
Combination) is formed by a combination of the following:
8.
Device Bus Operations
This section describes the requirements and use of the device bus operations, which are initiated through the
internal command register. The command register itself does not occupy any addressable memory location.
The register is a latch used to store the commands, along with the address and data information needed to
S29GL064N
90
T
A
I
02
2
PACKING TYPE
0
= Tray
2
= 7-inch Tape and Reel
3
= 13-inch Tape and Reel
MODEL NUMBER
01 =
x8/x16, V
CC
= V
IO
= 2.7 – 3.6 V, Uniform sector, WP#/ACC = V
IL
protects highest addressed sector
02 =
x8/x16, V
CC
= V
IO
= 2.7 – 3.6 V, Uniform sector, WP#/ACC = V
IL
protects lowest addressed sector
03 =
x8/x16, V
CC
= 2.7 – 3.6 V, Top boot sector, WP#/ACC = V
IL
protects top two addressed sectors
04 =
x8/x16, V
CC
= 2.7 – 3.6 V, Bottom boot sector, WP#/ACC = V
IL
protects bottom two addressed sectors
06 =
x16, V
CC
= 2.7 – 3.6 V, Uniform sector, WP# = V
IL
protects highest addressed sector
07 =
x16, V
CC
= 2.7 – 3.6 V, Uniform sector, WP# = V
IL
protects lowest addressed sector
V1 =
x8/x16, V
CC
= 2.7 – 3.6 V, V
IO
= 1.65 - 3.6 V, Uniform sector, WP#/ACC = V
IL
protects highest addressed sector
V2 =
x8/x16, V
CC
= 2.7 – 3.6 V, V
IO
= 1.65 - 3.6 V, Uniform sector, WP#/ACC = V
IL
protects lowest addressed sector
V6 =
x16, V
CC
= 2.7 – 3.6 V, V
IO
= 1.65 - 3.6 V, Uniform sector, WP# = V
IL
protects highest addressed sector
V7 =
x16, V
CC
= 2.7 – 3.6 V, V
IO
= 1.65 - 3.6 V, Uniform sector, WP# = V
IL
protects lowest addressed sector
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
PACKAGE MATERIAL SET
A
= Standard
(Note 4)
F
= Pb-Free
PACKAGE TYPE
T
=
Thin Small Outline Package (TSOP) Standard Pinout
B
=
Fine-pitch Ball-Grid Array Package
F
=
Fortified Ball-Grid Array Package
SPEED OPTION
See Product Selector Guide and Valid Combinations (90 = 90 ns, 11 = 110 ns)
DEVICE NUMBER/DESCRIPTION
S29GL064N, 64 Megabit Page-Mode Flash Memory
Manufactured using 110 nm MirrorBit
Process Technology, 3.0 Volt-only Read, Program, and Erase
Table 7.1
S29GL064N Valid Combinations
(Note 4)
S29GL064N Valid Combinations
Package Description
Device Number
Speed Option
Package, Material &
Temperature Range
Model Number
Packing
Type
S29GL064N
90
TFI
03, 04, 06, 07
0, 2, 3
(Note 1)
TS048
(Note 2)
TSOP
11
V6, V7
90
01, 02
TS056
(Note 2)
TSOP
11
V1, V2
90
BFI
03, 04
VBK048
(Note 3)
Fine-pitch BGA
90
FFI
01, 02, 03, 04
LAA064
(Note 3)
Fortified BGA
11
V1, V2
Notes
1. Type 0 is standard. Specify others as required: TSOPs can be packed in Types 0 and 3; BGAs can be
packed in Types 0, 2, or 3.
2. TSOP package marking omits packing type designator from ordering part number.
3. BGA package marking omits leading
S29
and packing type designator from ordering part number.
4. Contact local sales for availability for Leaded lead-frame parts.
Valid Combinations
Valid Combinations list configurations
planned to be supported in volume for this
device. Consult your local sales office to
confirm availability of specific valid
combinations and to check on newly
released combinations.
相關(guān)PDF資料
PDF描述
S29GL064N11BAIV10 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N11BAIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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