參數(shù)資料
型號: S29GL064M90FFIR32
廠商: SPANSION LLC
元件分類: DRAM
英文描述: MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (S)- (1)
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝: 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數(shù): 155/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90FFIR32
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
155
P r e l i m i n a r y
Physical Dimensions
FPT-48P-M19
+.003
0.08
+0.03
.007
0.17
"A"
(Stand off height)
0.10(.004)
(Mounting
height)
(.472
±
.008)
12.00
±
0.20
LEAD No.
48
25
24
1
(.004
±
.002)
0.10(.004)
M
1.10
.043
+0.10
0.05
+.004
0.10
±
0.05
(.009
±
.002)
0.22
±
0.05
(.787
±
.008)
18.40
±
0.20
20.00
±
0.20
(.724
±
.008)
INDEX
0~8
0.25(.010)
0.50(.020)
0.60
±
0.15
(.024
±
.006)
Details of "A" part
*
*
相關(guān)PDF資料
PDF描述
S29GL064M90FFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TDIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP
S29GL064M90TAIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray