參數資料
型號： S29GL064M90FFIR30
廠商： SPANSION LLC
元件分類： DRAM
英文描述： MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (S)- (2)
中文描述： 4M X 16 FLASH 3V PROM, 90 ns, PBGA64
封裝： 13 X 11 MM, LEAD FREE, FORTIFIED, BGA-64
文件頁數： 111/160頁
文件大?。?/td> 2142K
代理商： S29GL064M90FFIR30
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
111
P r e l i m i n a r y
Figure 6. Erase Operation
Erase Suspend/Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase
operation and then read data from, or program data to, any sector not selected
for erasure. This command is valid only during the sector erase operation, includ-
ing the 50 μs time-out period during the sector erase command sequence. The
Erase Suspend command is ignored if written during the chip erase operation or
Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation,
the device requires a typical of 5
μ
s
(
maximum of 20
μ
s) to suspend the erase
operation. However, when the Erase Suspend command is written during the sec-
tor erase time-out, the device immediately terminates the time-out period and
suspends the erase operation.
After the erase operation has been suspended, the device enters the erase-sus-
pend-read mode. The system can read data from or program data to any sector
not selected for erasure. (The device “erase suspends” all sectors selected for
erasure.) Reading at any address within erase-suspended sectors produces sta-
tus information on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2
together, to determine if a sector is actively erasing or is erase-suspended. Refer
to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to
the erase-suspend-read mode. The system can determine the status of the pro-
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1. See Table
31
and Table
32
for program command
sequence.
2. See the section on DQ3 for information on the sector
erase timer.
相關PDF資料
PDF描述
S29GL064M90FFIR32 MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.008; RDS (ON) typ. (ohm) @4V[4.5V]: 0.013 (5V); RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1400; toff (µs) typ: 0.055; Package: LDPAK (S)- (1)
S29GL064M90FFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR20 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90TCIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
相關代理商/技術參數
參數描述
S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
S29GL064M90TAIR2 制造商:Spansion 功能描述:
S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
S29GL064M90TAIR3 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP
S29GL064M90TAIR30 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 48-Pin TSOP Tray
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