參數(shù)資料
型號: S29GL064M90FBIR02
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術的MirrorBit
文件頁數(shù): 43/160頁
文件大?。?/td> 2142K
代理商: S29GL064M90FBIR02
April 30, 2004 S29GLxxxM_00A5
S29GLxxxM MirrorBit
TM
Flash Family
43
P r e l i m i n a r y
SA105
1
1
0
1
0
0
1
690000–69FFFF
SA106
1
1
0
1
0
1
0
6A0000–6AFFFF
SA107
1
1
0
1
0
1
1
6B0000–6BFFFF
SA108
1
1
0
1
1
0
0
6C0000–6CFFFF
SA109
1
1
0
1
1
0
1
6D0000–6DFFFF
SA110
1
1
0
1
1
1
0
6E0000–6EFFFF
SA111
1
1
0
1
1
1
1
6F0000–6FFFFF
SA112
1
1
1
0
0
0
0
700000–70FFFF
SA113
1
1
1
0
0
0
1
710000–71FFFF
SA114
1
1
1
0
0
1
0
720000–72FFFF
SA115
1
1
1
0
0
1
1
730000–73FFFF
SA116
1
1
1
0
1
0
0
740000–74FFFF
SA117
1
1
1
0
1
0
1
750000–75FFFF
SA118
1
1
1
0
1
1
0
760000–76FFFF
SA119
1
1
1
0
1
1
1
770000–77FFFF
SA120
1
1
1
1
0
0
0
780000–78FFFF
SA121
1
1
1
1
0
0
1
790000–79FFFF
SA122
1
1
1
1
0
1
0
7A0000–7AFFFF
SA123
1
1
1
1
0
1
1
7B0000–7BFFFF
SA124
1
1
1
1
1
0
0
7C0000–7CFFFF
SA125
1
1
1
1
1
0
1
7D0000–7DFFFF
SA126
1
1
1
1
1
1
0
7E0000–7EFFFF
SA127
1
1
1
1
1
1
1
7F0000–7FFFFF
Table 6. S29GL064M (Model R0) Sector Address Table (Continued)
Sector
A22
A21
A20
A19
A18
A17
A16
8-bit Address Range
(in hexadecimal)
相關PDF資料
PDF描述
S29GL064M90FBIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR20 MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
S29GL064M90FBIR22 MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
S29GL064M90FBIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FDIR22 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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