參數(shù)資料
型號(hào): S29GL064M90FBIR00
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
文件頁數(shù): 126/160頁
文件大小: 2142K
代理商: S29GL064M90FBIR00
126
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
AC Characteristics
Figure 13. Read Operation Timings
* Figure shows device in word mode. Addresses are A1–A-1 for byte mode.
Figure 14. Page Read Timings
t
OH
t
CE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
t
RC
t
ACC
t
OEH
t
RH
t
OE
t
RH
0 V
RY/BY#
RESET#
t
DF
A23
-
A2
CE#
OE#
A1
-
A0*
Data Bus
Same Page
Aa
Ab
Ac
Ad
Qa
Qb
Qc
Qd
t
ACC
t
PACC
t
PACC
t
PACC
相關(guān)PDF資料
PDF描述
S29GL064M90FBIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR03 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
S29GL064M90FBIR20 MOSFET, Switching; VDSS (V): 290; ID (A): 18; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.07; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2200; toff (µs) typ: 0.11; Package: TO-220FN
S29GL064M90FBIR22 MOSFET, Switching; VDSS (V): 300; ID (A): 40; Pch : 150; RDS (ON) typ. (ohm) @10V: 0.058; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 5150; toff (µs) typ: 0.22; Package: TO-3P
S29GL064M90FBIR23 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
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S29GL064M90TAIR2 制造商:Spansion 功能描述:
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