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參數(shù)資料
| 型號： | S29GL064M90FAIR00 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| 中文描述： | 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit |
| 文件頁數(shù)： | 28/160頁 |
| 文件大?。?/td> | 2142K |
| 代理商： | S29GL064M90FAIR00 |
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28
S29GLxxxM MirrorBit
TM
Flash Family
S29GLxxxM_00A5 April 30, 2004
P r e l i m i n a r y
Device Bus Operations
This section describes the requirements and use of the device bus operations,
which are initiated through the internal command register. The command register
itself does not occupy any addressable memory location. The register is a latch
used to store the commands, along with the address and data information
needed to execute the command. The contents of the register serve as inputs to
the internal state machine. The state machine outputs dictate the function of the
device. Table 1 lists the device bus operations, the inputs and control levels they
require, and the resulting output. The following subsections describe each of
these operations in further detail.
Table 1. Device Bus Operations
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 11.5–12.5
V, V
HH
= 11.5–12.5
V, X = Don’t Care, SA = Sector
Address, A
IN
= Address In, D
IN
= Data In, D
OUT
= Data Out
Notes:
1. Addresses are Amax:A0 in word mode; Amax:A-1 in byte mode. Sector addresses are Amax:A15 in both modes.
2. The sector protect and sector unprotect functions may also be implemented via programming equipment. See the
“Sector Group Protection and Unprotection” section.
3. If WP# = V
IL
, the first or last sector remains protected (for uniform sector devices), and the two outer boot sectors
are protected (for boot sector devices). If WP# = V
IH
, the first or last sector, or the two outer boot sectors will be
protected or unprotected as determined by the method described in “Sector Group Protection and Unprotection”.
All sectors are unprotected when shipped from the factory (The SecSi Sector may be factory protected depending
on version ordered.)
4. D
IN
or D
OUT
as required by command sequence, data polling, or sector protect algorithm (see Figure 2).
Operation
CE#
OE#
WE
#
RESET#
WP#
ACC
Addresses
(Note 1)
DQ0–
DQ7
DQ8–DQ15
BYTE#
= V
IH
BYTE#
= V
IL
Read
L
L
H
H
X
X
A
IN
D
OUT
D
OUT
DQ8–DQ14
= High-Z,
DQ15 = A-1
Write (Program/Erase)
L
H
L
H
(Note
3)
X
A
IN
(Note
4)
(Note
4)
Accelerated Program
L
H
L
H
(Note
3)
V
HH
A
IN
(Note
4)
(Note
4)
Standby
V
CC
±
0.3
V
X
X
V
CC
±
0.3 V
X
H
X
High-Z
High-Z
High-Z
Output Disable
L
H
H
H
X
X
X
High-Z
High-Z
High-Z
Reset
X
X
X
L
X
X
X
High-Z
High-Z
High-Z
Sector Group Protect
(Note 2)
L
H
L
V
ID
H
X
SA, A6 =L,
A3=L, A2=L,
A1=H, A0=L
(Note
4)
X
X
Sector Group
Unprotect
(Note 2)
L
H
L
V
ID
H
X
SA, A6=H,
A3=L, A2=L,
A1=H, A0=L
(Note
4)
X
X
Temporary Sector
Group Unprotect
X
X
X
V
ID
H
X
A
IN
(Note
4)
(Note
4)
High-Z
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| S29GL064M90FAIR02 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90FAIR03 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL064M90FAIR10 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
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| S29GL064M90FAIR13 | 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90FAIR40 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 64-Pin Fortified BGA Tray |
| S29GL064M90FFIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR00 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
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