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    • 您現(xiàn)在的位置:買賣IC網(wǎng) > PDF目錄385801 > S29GL064M90BCIR32 (Spansion Inc.) 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology PDF資料下載
    參數(shù)資料
    型號(hào): S29GL064M90BCIR32
    廠商: Spansion Inc.
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    中文描述: 3.0伏只頁(yè)面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
    文件頁(yè)數(shù): 103/160頁(yè)
    文件大小: 2142K
    代理商: S29GL064M90BCIR32
    第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)第60頁(yè)第61頁(yè)第62頁(yè)第63頁(yè)第64頁(yè)第65頁(yè)第66頁(yè)第67頁(yè)第68頁(yè)第69頁(yè)第70頁(yè)第71頁(yè)第72頁(yè)第73頁(yè)第74頁(yè)第75頁(yè)第76頁(yè)第77頁(yè)第78頁(yè)第79頁(yè)第80頁(yè)第81頁(yè)第82頁(yè)第83頁(yè)第84頁(yè)第85頁(yè)第86頁(yè)第87頁(yè)第88頁(yè)第89頁(yè)第90頁(yè)第91頁(yè)第92頁(yè)第93頁(yè)第94頁(yè)第95頁(yè)第96頁(yè)第97頁(yè)第98頁(yè)第99頁(yè)第100頁(yè)第101頁(yè)第102頁(yè)當(dāng)前第103頁(yè)第104頁(yè)第105頁(yè)第106頁(yè)第107頁(yè)第108頁(yè)第109頁(yè)第110頁(yè)第111頁(yè)第112頁(yè)第113頁(yè)第114頁(yè)第115頁(yè)第116頁(yè)第117頁(yè)第118頁(yè)第119頁(yè)第120頁(yè)第121頁(yè)第122頁(yè)第123頁(yè)第124頁(yè)第125頁(yè)第126頁(yè)第127頁(yè)第128頁(yè)第129頁(yè)第130頁(yè)第131頁(yè)第132頁(yè)第133頁(yè)第134頁(yè)第135頁(yè)第136頁(yè)第137頁(yè)第138頁(yè)第139頁(yè)第140頁(yè)第141頁(yè)第142頁(yè)第143頁(yè)第144頁(yè)第145頁(yè)第146頁(yè)第147頁(yè)第148頁(yè)第149頁(yè)第150頁(yè)第151頁(yè)第152頁(yè)第153頁(yè)第154頁(yè)第155頁(yè)第156頁(yè)第157頁(yè)第158頁(yè)第159頁(yè)第160頁(yè)
    April 30, 2004 S29GLxxxM_00A5
    S29GLxxxM MirrorBit
    TM
    Flash Family
    103
    P r e l i m i n a r y
    Autoselect Command Sequence
    The autoselect command sequence allows the host system to read several iden-
    tifier codes at specific addresses:
    Note:
    The device ID is read over three cycles. SA = Sector Address
    The autoselect command sequence is initiated by first writing two unlock cycles.
    This is followed by a third write cycle that contains the autoselect command. The
    device then enters the autoselect mode. The system may read at any address any
    number of times without initiating another autoselect command sequence:
    The system must write the reset command to return to the read mode (or erase-
    suspend-read mode if the device was previously in Erase Suspend).
    Enter SecSi Sector/Exit SecSi Sector Command Sequence
    The SecSi Sector region provides a secured data area containing an 8-word/16-
    byte random Electronic Serial Number (ESN). The system can access the SecSi
    Sector region by issuing the three-cycle Enter SecSi Sector command sequence.
    The device continues to access the SecSi Sector region until the system issues
    the four-cycle Exit SecSi Sector command sequence. The Exit SecSi Sector com-
    mand sequence returns the device to normal operation. Table
    31
    and Table
    32
    show the address and data requirements for both command sequences. See also
    “SecSi (Secured Silicon) Sector Flash Memory Region” for further information.
    Note that the ACC function and unlock bypass modes are not available when the
    SecSi Sector is enabled.
    Word Program Command Sequence
    Programming is a four-bus-cycle operation. The program command sequence is
    initiated by writing two unlock write cycles, followed by the program set-up com-
    mand. The program address and data are written next, which in turn initiate the
    Embedded Program algorithm. The system is not required to provide further con-
    trols or timings. The device automatically provides internally generated program
    pulses and verifies the programmed cell margin. Tables 31 and 32 show the ad-
    dress and data requirements for the word program command sequence,
    respectively.
    When the Embedded Program algorithm is complete, the device then returns to
    the read mode and addresses are no longer latched. The system can determine
    the status of the program operation by using DQ7 or DQ6. Refer to the Write Op-
    eration Status section for information on these status bits. Any commands
    written to the device during the Embedded Program Algorithm are ignored.
    Note
    that the SecSi Sector, autoselect, and CFI functions are unavailable when a pro-
    gram operation is in progress.
    Note that a
    hardware reset
    immediately
    terminates the program operation. The program command sequence should be
    Identifier Code
    A7:A0
    (x16)
    A6:A-1
    (x8)
    Manufacturer ID
    00h
    00h
    Device ID, Cycle 1
    01h
    02h
    Device ID, Cycle 2
    0Eh
    1Ch
    Device ID, Cycle 3
    0Fh
    1Eh
    SecSi Sector Factory Protect
    03h
    06h
    Sector Protect Verify
    (SA)02h
    (SA)04h
    相關(guān)PDF資料
    PDF描述
    S29GL064M90BCIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL064M90BDIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL064M90BFIR33 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL064M90FAIR00 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    S29GL064M90FAIR02 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    S29GL064M90FAIR40 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 64-Pin Fortified BGA Tray
    S29GL064M90FFIR2 制造商:Spansion 功能描述:
    S29GL064M90TAIR00 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray
    S29GL064M90TAIR2 制造商:Spansion 功能描述:
    S29GL064M90TAIR20 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray
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