參數(shù)資料
    型號: S29GL064M90BCIR30
    廠商: Spansion Inc.
    英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology
    中文描述: 3.0伏只頁面模式閃存具有0.23微米工藝技術(shù)的MirrorBit
    文件頁數(shù): 122/160頁
    文件大?。?/td> 2142K
    代理商: S29GL064M90BCIR30
    122
    S29GLxxxM MirrorBit
    TM
    Flash Family
    S29GLxxxM_00A5 April 30, 2004
    P r e l i m i n a r y
    DC Characteristics
    CMOS Compatible
    Notes:
    1. On the WP#/ACC pin only, the maximum input load current when WP# = V
    IL
    is ± 2.0 μA.
    2. The I
    CC
    current listed is typically less than 2 mA/MHz, with OE# at V
    IH
    .
    3. Maximum I
    CC
    specifications are tested with V
    CC
    = V
    CC
    max.
    4. S29GL032M, S29GL064M
    5. S29GL128M, S29GL256M
    6. I
    CC
    active while Embedded Erase or Embedded Program is in progress.
    7. Automatic sleep mode enables the low power mode when addresses remain stable for t
    ACC
    + 30 ns.
    8. V
    CC
    voltage requirements.
    9. Not 100% tested.
    Parameter
    Symbol
    Parameter Description
    (Notes)
    Test Conditions
    Min
    Typ
    Max
    Unit
    I
    LI
    Input Load Current (1)
    V
    IN
    = V
    SS
    to V
    CC
    ,
    V
    CC
    = V
    CC
    max
    ±
    1.0
    μA
    I
    LIT
    A9, ACC Input Load Current
    V
    CC
    = V
    CC max
    ; A9 = 12.5 V
    35
    μA
    I
    LR
    Reset Leakage Current
    V
    CC
    = V
    CC max
    ; RESET# = 12.5 V
    35
    μA
    I
    LO
    Output Leakage Current
    V
    OUT
    = V
    SS
    to V
    CC
    ,
    V
    CC
    = V
    CC max
    ±
    1.0
    μA
    I
    CC1
    V
    CC
    Initial Read Current (2), (3)
    CE# = V
    IL,
    OE# = V
    IH
    ,
    1 MHz
    5
    20
    mA
    5 MHz (4)
    18
    25
    5 MHz (5)
    25
    35
    10 MHz (4)
    35
    50
    10 MHz (5)
    40
    60
    I
    CC2
    V
    CC
    Intra-Page Read Current (2), (3)
    CE# = V
    IL,
    OE# = V
    IH
    10 MHz
    5
    20
    mA
    40 MHz
    10
    40
    I
    CC3
    V
    CC
    Active Write Current (3), (4)
    CE# = V
    IL,
    OE# = V
    IH
    50
    60
    mA
    I
    CC4
    V
    CC
    Standby Current (3)
    CE#, RESET# = V
    CC
    ±
    0.3 V,
    WP# = V
    IH
    1
    5
    μA
    I
    CC5
    V
    CC
    Reset Current (3)
    RESET# = V
    SS
    ±
    0.3 V, WP# = V
    IH
    1
    5
    μA
    I
    CC6
    Automatic Sleep Mode (3), (7)
    V
    = V
    CC
    ±
    0.3 V;
    -0.1< V
    IL
    0.3 V, WP# = V
    IH
    1
    5
    μA
    V
    IL
    Input Low Voltage 1(8)
    –0.5
    0.8
    V
    V
    IH
    Input High Voltage 1 (8)
    0.7 V
    CC
    V
    CC
    + 0.5
    V
    V
    HH
    Voltage for ACC Program Acceleration
    V
    CC
    = 2.7 –3.6 V
    11.5
    12.0
    12.5
    V
    V
    ID
    Voltage for Autoselect and Temporary
    Sector Unprotect
    V
    CC
    = 2.7 –3.6 V
    11.5
    12.0
    12.5
    V
    V
    OL
    Output Low Voltage (8)
    I
    OL
    = 4.0 mA, V
    CC
    = V
    CC min
    0.45
    V
    V
    OH1
    Output High Voltage
    I
    OH
    = –2.0 mA, V
    CC
    = V
    CC min
    0.85 V
    CC
    V
    V
    OH2
    I
    OH
    = –100 μA, V
    CC
    = V
    CC min
    V
    CC
    –0.4
    V
    V
    LKO
    Low V
    CC
    Lock-Out Voltage (9)
    2.3
    2.5
    V
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