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參數(shù)資料
| 型號： | S29GL032M10FCIR10 |
| 廠商： | Spansion Inc. |
| 英文描述： | MirrorBit Flash Family |
| 中文描述： | MirrorBit閃存系列 |
| 文件頁數(shù)： | 11/159頁 |
| 文件大小： | 5216K |
| 代理商： | S29GL032M10FCIR10 |
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108
S29GLxxxM MirrorBitTM Flash Family
S29GLxxxM_00_B3 Octorber 18, 2004
Data s he et
Figure 4. Program Operation
Program Suspend/Program Resume Command Sequence
The Program Suspend command allows the system to interrupt a programming operation or a Write to Buffer pro-
gramming operation so that data can be read from any non-suspended sector. When the Program Suspend
command is written during a programming process, the device halts the program operation within 15 s maximum
(5s typical) and updates the status bits. Addresses are not required when writing the Program Suspend
command.
After the programming operation is suspended, the system can read array data from any non-suspended sector.
The Program Suspend command may also be issued during a programming operation while an erase is suspended.
In this case, data may be read from any addresses not in Erase Suspend or Program Suspend. If a read is needed
from the SecSi Sector area (One-time Program area), then user must use the proper command sequences to enter
and exit this region. Note that the SecSi Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress.
The system may also write the autoselect command sequence when the device is in the Program Suspend mode.
The system can read as many autoselect codes as required. When the device exits the autoselect mode, the device
reverts to the Program Suspend mode, and is ready for another valid operation. See “Autoselect Command Se-
quence” on page 104 for more information.
After the Program Resume command is written, the device reverts to programming. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in the standard program operation.
See “Write Operation Status” on page 115 for more information.
START
Write Program
Command Sequence
Data Poll
from System
Verify Data?
No
Yes
Last Address?
No
Yes
Programming
Completed
Increment Address
Embedded
Program
algorithm
in progress
mand sequence.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032M10FCIR12 | MirrorBit Flash Family |
| S29GL032M10FCIR13 | MirrorBit Flash Family |
| S29GL032M10FCIR20 | MirrorBit Flash Family |
| S29GL032M10FCIR22 | Tantalum Capacitor; Capacitance:1000uF; Capacitance Tolerance:+/- 20 %; Working Voltage, DC:3V; Package/Case:7343-43; Terminal Type:PCB SMT; ESR:0.001ohm; Leaded Process Compatible:Yes; Packaging:Cut Tape |
| S29GL032M10FCIR23 | MirrorBit Flash Family |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032M10FCIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FCIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology |
| S29GL032M10FCIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FCIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
| S29GL032M10FCIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:MirrorBit Flash Family |
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