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參數(shù)資料
| 型號(hào)： | S29GL032A30FFI010 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 77/95頁 |
| 文件大?。?/td> | 2389K |
| 代理商： | S29GL032A30FFI010 |
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September 10, 2007 S29GL-A_00_A11
S29GL-A
77
D a t a
S h e e t
Notes
1. Not 100% tested.
2. See
Erase And Programming Performance on page 87
for more information
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after t
POLL
, status data is available immediately
after programming resumes. See
Figure 16.5 on page 79
.
Table 16.6
Erase and Program Operations-S29GL032A Only
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
AHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
CEPH
CE# High during toggle bit polling
Min
20
ns
t
OEPH
OE# High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Note
2
,
3
)
Typ
240
μs
Single Word Program Operation
(Note 2)
Typ
60
Accelerated Single Word Program Operation
(Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
VHH
V
HH
Rise and Fall Time
(Note 1)
Min
250
ns
t
VCS
V
CC
Setup Time
(Note 1)
Min
50
μs
t
BUSY
WE# High to RY/BY# Low
Min
90
100
110
ns
t
POLL
Program Valid before Status Polling
Max
4
μs
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