參數(shù)資料
型號(hào)： S29GL032A30FAIR23
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁數(shù)： 53/95頁
文件大?。?/td> 2389K
代理商： S29GL032A30FAIR23
September 10, 2007 S29GL-A_00_A11
S29GL-A
53
D a t a
S h e e t
9.3
Autoselect Command Sequence
The autoselect command sequence allows the host system to read several identifier codes at specific
addresses:
Note
The device ID is read over three cycles. SA = Sector Address
The autoselect command sequence is initiated by first writing two unlock cycles. This is followed by a third
write cycle that contains the autoselect command. The device then enters the autoselect mode. The system
may read at any address any number of times without initiating another autoselect command sequence:
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
device was previously in Erase Suspend).
9.4
Enter/Exit Secured Silicon Sector Command Sequence
The Secured Silicon Sector region provides a secured data area containing an 8-word/16-byte random
Electronic Serial Number (ESN). The system can access the Secured Silicon Sector region by issuing the
three-cycle Enter Secured Silicon Sector command sequence. The device continues to access the Secured
Silicon Sector region until the system issues the four-cycle Exit Secured Silicon Sector command sequence.
The Exit Secured Silicon Sector command sequence returns the device to normal operation.
Table 10.2
on page 61
and
Table 10.1 on page 62
show the address and data requirements for both command
sequences. See also
Secured Silicon Sector Flash Memory Region
on page 47
for further information.
Note
that the ACC function and unlock bypass modes are not available when the Secured Silicon Sector is
enabled.
9.4.1
Word Program Command Sequence
Programming is a four-bus-cycle operation. The program command sequence is initiated by writing two
unlock write cycles, followed by the program set-up command. The program address and data are written
next, which in turn initiate the Embedded Program algorithm. The system is not required to provide further
controls or timings. The device automatically provides internally generated program pulses and verifies the
programmed cell margin.
Table 10.2 on page 61
and
Table 10.1 on page 62
show the address and data
requirements for the word program command sequence, respectively.
When the Embedded Program algorithm is complete, the device then returns to the read mode and
addresses are no longer latched. The system can determine the status of the program operation by using
DQ7 or DQ6. Refer to
Write Operation Status
on page 63
for information on these status bits. Any commands
written to the device during the Embedded Program Algorithm are ignored.
Note that the Secured Silicon
Sector, autoselect, and CFI functions are unavailable when a program operation is in progress.
Note that a
hardware reset
immediately terminates the program operation. The program command sequence should be
reinitiated once the device returns to the read mode, to ensure data integrity.
Programming is allowed in any sequence of address locations and across sector boundaries. Programming
to the same word address multiple times without intervening erases (incremental bit programming) requires a
modified programming method. For such application requirements, please contact your local Spansion
representative. Word programming is supported for backward compatibility with existing Flash driver software
and for occasional writing of individual words. Use of write buffer programming (see below) is strongly
recommended for general programming use when more than a few words are to be programmed. The
effective word programming time using write buffer programming is approximately four times shorter than the
single word programming time.
Identifier Code
A7:A0 (x16)
A6:A-1 (x8)
Manufacturer ID
00h
00h
Device ID, Cycle 1
01h
02h
Device ID, Cycle 2
0Eh
1Ch
Device ID, Cycle 3
0Fh
1Eh
Secured Silicon Sector Factory Protect
03h
06h
Sector Protect Verify
(SA)02h
(SA)04h
相關(guān)PDF資料
PDF描述
S29GL032A30FFI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30FFI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FFIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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