參數(shù)資料
型號(hào)： S29GL032A30BFIR22
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁(yè)面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 48/95頁(yè)
文件大?。?/td> 2389K
代理商： S29GL032A30BFIR22
48
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
7.11.2
Factory Locked: Secured Silicon Sector Programmed and Protected At the
Factory
In devices with an ESN, the Secured Silicon Sector is protected when the device is shipped from the factory.
The Secured Silicon Sector cannot be modified in any way. An ESN Factory Locked device has an 16-byte
random ESN at addresses 000000h–000007h. Please contact your sales representative for details on
ordering ESN Factory Locked devices.
Customers may opt to have their code programmed by the factory through the Spansion programming
service (Customer Factory Locked). The devices are then shipped from the factory with the Secured Silicon
Sector permanently locked. Contact your sales representative for details on using the Spansion programming
service.
7.12
Write Protect (WP#)
The Write Protect function provides a hardware method of protecting the first or last sector group without
using V
ID
. Write Protect is one of two functions provided by the WP#/ACC input.
If the system asserts V
IL
on the WP#/ACC pin, the device disables program and erase functions in the first or
last sector group independently of whether those sector groups were protected or unprotected. Note that if
WP#/ACC is at V
IL
when the device is in the standby mode, the maximum input load current is increased. See
the table in
DC Characteristics
on page 70
.
If the system asserts V
IH
on the WP#/ACC pin, the device reverts to whether the first or last sector was
previously set to be protected or unprotected using the method described in
Sector Group Protection
and Unprotection
on page 41
.
Note that WP# contains an internal pull-up; when unconnected, WP# is
at V
IH
.
7.13
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing provides data protection
against inadvertent writes (refer to
Table 10.2 on page 61
and
Table 10.1 on page 62
for command
definitions). In addition, the following hardware data protection measures prevent accidental erasure or
programming, which might otherwise be caused by spurious system level signals during V
CC
power-up and
power-down transitions, or from system noise.
7.13.1
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This protects data during V
CC
power-up and power-down. The command register and all internal program/erase circuits are disabled, and
the device resets to the read mode. Subsequent writes are ignored until V
CC
is greater than V
LKO
. The
system must provide the proper signals to the control pins to prevent unintentional writes when V
CC
is greater
than V
LKO
.
7.13.2
Write Pulse
Glitch
Protection
Noise pulses of less than 3 ns (typical) on OE#, CE# or WE# do not initiate a write cycle.
7.13.3
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
or WE# = V
IH
. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a logical one.
7.13.4
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to the read mode on power-up.
相關(guān)PDF資料
PDF描述
S29GL032A30BFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30BFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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