參數(shù)資料
型號(hào)： S29GL032A30BFIR20
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁數(shù)： 62/95頁
文件大小： 2389K
代理商： S29GL032A30BFIR20
62
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
Table 10.1
Command Definitions (x8 Mode, BYTE# = V
IL
)
Command Sequence
(Note 1)
C
Bus Cycles (Notes
2
–
5
)
First
Second
Third
Fourth
Fifth
Sixth
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read
(Note 6)
1
RA
RD
Reset
(Note 7)
1
XXX
F0
A
(
Manufacturer ID
4
AAA
AA
555
55
AAA
90
X00
01
Device ID
(Note 9)
6
AAA
AA
555
55
AAA
90
X02
7E
X1C
(Note 9)
X1E
(Note 9)
Device ID
(Note 1)
4
AAA
AA
555
55
AAA
90
X02
(Note 2)
Secured Silicon Sector Factory Protect
4
AAA
AA
555
55
AAA
90
X06
(Note 1)
Sector Group Protect Verify
(Note 3)
4
AAA
AA
555
55
AAA
90
(SA)X04
00/01
Enter Secured Silicon Sector Region
3
AAA
AA
555
55
AAA
88
Exit Secured Silicon Sector Region
4
AAA
AA
555
55
AAA
90
XXX
00
Write to Buffer
(Note 4)
3
AAA
AA
555
55
SA
25
SA
BC
PA
PD
WBL
PD
Program Buffer to Flash
1
SA
29
Write to Buffer Abort Reset
(Note 5)
3
AAA
AA
555
55
AAA
F0
Chip Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
Sector Erase
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
SA
30
Program/Erase Suspend
(Note 6)
1
XXX
B0
Program/Erase Resume
(Note 7)
1
XXX
30
CFI Query
(Note 8)
1
AA
98
Legend
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or CE# pulse,
whichever happens later.
PD = Program Data for location PA. Data latches on rising edge of WE# or CE#
pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or erased.
Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write buffer page as
PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
Notes
1. See
Table 7.1 on page 22
for description of bus operations.
2. All values are in hexadecimal.
3. Shaded cells indicate read cycles. All others are write cycles.
4. During unlock and command cycles, when lower address bits are 555 or
AAA as shown in table, address bits above A11 are don’t care.
5. Unless otherwise noted, address bits A21–A11 are don’t cares.
6. No unlock or command cycles required when device is in read mode.
7. Reset command is required to return to read mode (or to erase-suspend-
read mode if previously in Erase Suspend) when device is in autoselect
mode, or if DQ5 goes high while device is providing status information.
8. Fourth cycle of autoselect command sequence is a read cycle. Data bits
DQ15–DQ8 are don’t care. See
Autoselect Command Sequence on page 53
or more information.
9. For S29GL064A and S29GL032A Device ID must be read in three cycles.
1. For S29GL016A, Device ID must be read in one cycle.
2. Refer to
Table 7.12 on page 40
, for data indicating Secured Silicon Sector
factory protect status.
3. Data is 00h for an unprotected sector group and 01h for a protected sector
group.
4. Total number of cycles in command sequence is determined by number of
bytes written to write buffer. Maximum number of cycles in command
sequence is 37, including
Program Buffer to Flash
command.
5. Command sequence resets device for next command after aborted write-to-
buffer operation.
6. System may read and program in non-erasing sectors, or enter autoselect
mode, when in Erase Suspend mode. Erase Suspend command is valid only
during a sector erase operation.
7. Erase Resume command is valid only during Erase Suspend mode.
8. Command is valid when device is ready to read array data or when device is
in autoselect mode.
9. Refer to
Table 7.12 on page 40
, for individual Device IDs per device density
and model number.
相關(guān)PDF資料
PDF描述
S29GL032A30BFIR22 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30BFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A30BFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30BFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A30FAI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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