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| 型號： | S29GL032A30BFI012 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 83/95頁 |
| 文件大?。?/td> | 2389K |
| 代理商： | S29GL032A30BFI012 |
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September 10, 2007 S29GL-A_00_A11
S29GL-A
83
D a t a
S h e e t
Notes
1. Not 100% tested.
2. See
Erase And Programming Performance on page 87
for more information.
3. For 1–16 words/1–32 bytes programmed.
4. If a program suspend command is issued within t
, the device requires t
before reading status data, once programming resumes
(that is, the program resume command is written). If the suspend command was issued after t
POLL
, status data is available immediately
after programming resumes. See
Figure 16.13 on page 86
.
Table 16.9
Alternate CE# Controlled Erase and Program Operations-S29GL064A
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
t
AVAV
t
WC
Write Cycle Time
(Note 1)
Min
90
100
110
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
35
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write (OE# High to WE#
Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
t
ELEH
t
CP
CE# Pulse Width
Min
35
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
25
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes
2
,
3
)
Typ
240
μs
Single Word Program Operation
(Note 2)
Typ
60
Accelerated Single Word Program Operation
(Note 2)
Typ
54
t
WHWH2
t
WHWH2
Sector Erase Operation
(Note 2)
Typ
0.5
sec
t
RH
RESET# High Time Before Write
Min
50
ns
t
POLL
Program Valid before Status Polling
(Note 4)
Max
4
μs
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| S29GL032A30BFI013 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A30BFIR10 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032A30BFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A30BFIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A30BFIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A30BFIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A30BFIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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