參數(shù)資料
型號(hào): S29GL032A100TFI012
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述: 64兆,32兆和16兆位3.0伏只頁(yè)面模式閃存,含有200納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù): 46/95頁(yè)
文件大小: 2389K
代理商: S29GL032A100TFI012
46
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
Figure 7.2
In-System Sector Group Protect/Unprotect Algorithms
Sector Group Protect:
Write 60h to sector
group address with
A6–A0 = 0xx0010
Set up sector
group address
Wait 150 μs
Verify Sector Group
Protect: Write 40h
to sector group
address with
A6–A0 = 0xx0010
Read from
sector group address
with A6–A0
= 0xx0010
START
PLSCNT = 1
RESET# = V
ID
Wait 1
μ
s
First Write
Cycle = 60h
Data = 01h
Remove V
from RESET#
Write reset
command
Sector Group
Protect complete
Yes
Yes
No
PLSCNT
= 25
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
Sector Group
Unprotect:
Write 60h to sector
group address with
A6–A0 = 1xx0010
Set up first sector
group address
Wait 15 ms
Verify Sector Group
Unprotect: Write
40h to sector group
address with
A6–A0 = 1xx0010
Read from
sector group
address with
A6–A0 = 1xx0010
START
PLSCNT = 1
RESET# = V
ID
Wait 1
μ
s
Data = 00h
Last sector
group
verified
Remove V
from RESET#
Write reset
command
Sector Group
Unprotect complete
Yes
No
PLSCNT
= 1000
Yes
Device failed
Increment
PLSCNT
Temporary Sector
Group Unprotect
Mode
No
All sector
groups
protected
Yes
Protect all sector
groups:
The indicated
portion of the sector
group protect algorithm
must be performed for all
unprotected sector
groups prior to issuing
the first sector group
unprotect address
Set up
next sector group
address
No
Yes
No
Yes
No
No
Yes
No
Sector Group
Protect
Algorithm
Sector Group
Unprotect
Algorithm
First Write
Cycle = 60h
Protect
another
sector group
Reset
PLSCNT = 1
相關(guān)PDF資料
PDF描述
S29GL032A100TFI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR10 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR12 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR13 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A100TFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology