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參數(shù)資料
| 型號(hào)： | S29GL032A100TAIR22 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 94/95頁 |
| 文件大?。?/td> | 2389K |
| 代理商： | S29GL032A100TAIR22 |
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94
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
19. Revision History
Section
Description
Revision A (October 13, 2004)
Global
Initial Release.
Revision A1 (December 17, 2004)
Secured Silicon Sector Flash Memory Region
Updated Secured Silicon Sector address table with addresses in x8-mode.
DC Characteristics (CMOS Compatible)
Re-specified I
LIT
over temperature. Corrected WP#/ACC input load current footnote.
Revision A2 (January 28, 2005)
Global
Added S29GL032A information.
Revision A3 (April 22, 2005)
Global
Added S29GL016A information.
Table 7.12
Corrected Secured Silicon Sector Indicator Bit.
Revision A4 (July 29, 2005)
Global
Corrected S29GL032A fine-pitch BGA package description from VBN048 to VBK048.
Corrected S29GL016A information in Tables 15 and 17.
Updated Ordering Information and Valid Combinations for S29GL016A, S29GL032A,
and S29GL064A. Added requirements for MCP Cellular Handsets.
Added VBU056 Connection Diagram and VBU056 Package Dimension drawings
Revision A5 (January 11, 2006)
Global
Added model numbers 01 and 02 to ordering information section and autoselect codes
table.
Corrected sector address bit range in S29GL064A table for models R3, W3 and table
for models R4 and W4.
Replaced model numbers W1, W2 with W3, W4 in DQ7 to DQ0 section of sector
address table.
Revision A6 (June 5, 2006)
Global
Removed the 64 Mb MCP-compatible devices.
Removed the 32 Mb single-bank products in the MCP-compatible package.
Revision A7 (January 22, 2007)
AC Characteristics
Erase and Program Operations table:
Changed t
BUSY
to a maximum specification.
Revision A8 (January 29, 2007)
Global
Deleted Preliminary designation from document.
Revision A9 (March 23, 2007)
Connection Diagrams
Clarified notes for LAA064 package.
Sector Address Tables
Corrected page breaks in tables.
Revision A10 (August 6, 2007)
Device Geometry Definition Table
Corrected CFI values in Erase Block Region 1 & 2
Revision A11 (September 10, 2007)
Cover page and first page
GL032A is now included as EOD, in addition to GL064A.
Device Geometry Definition Table
Corrected CFI values in Erase Block Region 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL032A100TAIR23 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI010 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI012 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI013 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFIR10 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032A100TAIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI012 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFI013 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100TFIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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