參數(shù)資料
型號: S29GL032A100TAI010
廠商: Spansion Inc.
英文描述: 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述: 64兆,32兆和16兆位3.0伏只頁面模式閃存,含有200納米MirrorBit工藝技術
文件頁數(shù): 93/95頁
文件大?。?/td> 2389K
代理商: S29GL032A100TAI010
September 10, 2007 S29GL-A_00_A11
S29GL-A
93
D a t a
S h e e t
18.6
VBU056—Ball Fine-pitch Ball Grid Array (BGA) 9 x 7 mm Package
3440\ 16-038.25 \ 01.13.05
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS.
3. AS NOTED).
4. e REPRESENTS THE SOLDER BALL GRID PITCH.
5. SYMBOL "MD" IS THE BALL ROW MATRIX SIZE IN THE
"D" DIRECTION.
SYMBOL "ME" IS THE BALL COLUMN MATRIX SIZE IN THE
"E" DIRECTION.
N IS THE TOTAL NUMBER OF SOLDER BALLS.
6
DIMENSION "b" IS MEASURED AT THE MAXIMUM BALL
DIAMETER IN A PLANE PARALLEL TO DATUM C.
7
SD AND SE ARE MEASURED WITH RESPECT TO DATUMS
A AND B AND DEFINE THE POSITION OF THE CENTER
SOLDER BALL IN THE OUTER ROW.
WHEN THERE IS AN ODD NUMBER OF SOLDER BALLS IN
THE OUTER ROW PARALLEL TO THE D OR E DIMENSION,
RESPECTIVELY, SD OR SE = 0.000.
WHEN THERE IS AN EVEN NUMBER OF SOLDER BALLS IN
THE OUTER ROW, SD OR SE = e/2
8. NOT USED.
9. "+" INDICATES THE THEORETICAL CENTER OF DEPOPULATED
BALLS.
10 A1 CORNER TO BE IDENTIFIED BY CHAMFER, LASER OR INK
MARK, METALLIZED MARK INDENTATION OR OTHER MEANS.
PACKAGE
VBU 056
JEDEC
N/A
9.00 mm x 7.00 mm NOM
PACKAGE
SYMBOL
MIN
NOM
MAX
NOTE
A
---
---
1.00
OVERALL THICKNESS
A1
0.17
---
---
BALL HEIGHT
A2
0.62
---
0.76
BODY THICKNESS
D
9.00 BSC.
BODY SIZE
E
7.00 BSC.
BODY SIZE
D1
5.60 BSC.
BALL FOOTPRINT
E1
5.60 BSC.
BALL FOOTPRINT
MD
8
ROW MATRIX SIZE D DIRECTION
ME
8
ROW MATRIX SIZE E DIRECTION
N
φ
b
e
56
TOTAL BALL COUNT
0.35
0.40
0.45
BALL DIAMETER
0.80 BSC.
BALL PITCH
SD / SE
0.40 BSC.
SOLDER BALL PLACEMENT
A1,A8,D4,D5,E4,E5,H1,H8
DEPOPULATED SOLDER BALLS
SEATING PLANE
E1
7
SE
D1
e
A
C
D
B
E
F
G
H
7
8
6
5
3
2
1
e
4
A1 CORNER
7
SD
BOTTOM VIEW
C
C
A
D
E
C
0.05
(2X)
C
0.05
B
(2X)
C
10
SIDE VIEW
TOP VIEW
INDEX MARK
A1
A
A2
A1 CORNER
0.10
0.08
B
A
C
M
M C
φ
0.08
φ
0.15
6
NX
φ
b
相關PDF資料
PDF描述
S29GL032A100TAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A10BAI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A10BFI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A10BFI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A10BFI013 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
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