參數(shù)資料
型號： S29GL032A100FFIR13
廠商： Spansion Inc.
英文描述： 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
中文描述： 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù)
文件頁數(shù)： 66/95頁
文件大小： 2389K
代理商： S29GL032A100FFIR13
66
S29GL-A
S29GL-A_00_A11 September 10, 2007
D a t a
S h e e t
Figure 10.4
Toggle Bit Algorithm
Note
The system should recheck the toggle bit even if DQ5 =
1
because the toggle bit may stop toggling as DQ5 changes to
1
. See
DQ6: Toggle
Bit I on page 65
and
DQ2: Toggle Bit II on page 66
for more information.
10.7
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing (that
is, the Embedded Erase algorithm is in progress), or whether that sector is erase-suspended. Toggle Bit II is
valid after the rising edge of the final WE# pulse in the command sequence.
DQ2 toggles when the system reads at addresses within those sectors that were selected for erasure. (The
system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish whether the
sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the device is
actively erasing, or is in Erase Suspend, but cannot distinguish which sectors are selected for erasure. Thus,
both status bits are required for sector and mode information. Refer to
Table 10.2 on page 68
to compare
outputs for DQ2 and DQ6.
Figure 10.4 on page 66
shows the toggle bit algorithm in flowchart form, and
DQ2: Toggle Bit II
on page 66
explains the algorithm. See also
RY/BY#: Ready/Busy#
on page 64
.
Figure 16.9 on page 81
shows the
toggle bit timing diagram.
Figure 16.10 on page 81
shows the differences between DQ2 and DQ6 in graphical
form.
S
TART
No
Ye
s
Ye
s
DQ5 = 1
No
Ye
s
Toggle Bit
= Toggle
No
Progr
a
m/Er
as
e
Oper
a
tion Not
Complete, Write
Re
s
et Comm
a
nd
Progr
a
m/Er
as
e
Oper
a
tion Complete
Re
a
d DQ7–DQ0
Toggle Bit
= Toggle
Re
a
d DQ7–DQ0
Twice
Re
a
d DQ7–DQ0
相關(guān)PDF資料
PDF描述
S29GL032A100FFIR20 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100FFIR22 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100FFIR23 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TAI010 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TAI012 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL032A100FFIR20 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100FFIR22 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100FFIR23 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TAI010 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
S29GL032A100TAI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*