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參數(shù)資料
| 型號： | S29GL032A100FFI013 |
| 廠商： | Spansion Inc. |
| 英文描述： | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| 中文描述： | 64兆，32兆和16兆位3.0伏只頁面模式閃存，含有200納米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 55/95頁 |
| 文件大?。?/td> | 2389K |
| 代理商： | S29GL032A100FFI013 |
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September 10, 2007 S29GL-A_00_A11
S29GL-A
55
D a t a
S h e e t
Write an Address/Data pair to a different write-buffer-page than the one selected by the Starting Address
during the write buffer data loading stage of the operation.
Write data other than the Confirm Command after the specified number of data load cycles.
The abort condition is indicated by DQ1 =
1
, DQ7 = DATA# (for the last address location loaded), DQ6 =
toggle, and DQ5=
0
. A Write-to-Buffer-Abort Reset command sequence must be written to reset the device
for the next operation.
Note that the Secured Silicon Sector, autoselect, and CFI functions are unavailable when a program
operation is in progress.
This flash device is capable of handling multiple write buffer programming operations
on the same write buffer address range without intervening erases. For applications requiring incremental bit
programming, a modified programming method is required; please contact your local Spansion
representative.
Any bit in a write buffer address range cannot be programmed from
0
back to a
1
.
Attempting to do so may cause the device to set DQ5=1, of cause the DQ7 and DQ6 status bits to indicate
the operation was successful. However, a succeeding read shows that the data is still
0
. Only erase
operations can convert a
0
to a
1
.
9.4.4
Accelerated Program
The device offers accelerated program operations through the WP#/ACC or ACC pin depending on the
particular product. When the system asserts V
HH
on the WP#/ACC or ACC pin. The device uses the higher
voltage on the WP#/ACC or ACC pin to accelerate the operation.
Note that the
WP#/
ACC pin must not be at
V
HH
for operations other than accelerated programming, or device damage may result. WP# contains an
internal pull-up; when unconnected, WP# is at V
IH
.
Figure 9.1 on page 56
illustrates the algorithm for the program operation. Refer to the Erase and Program
Operations–
AC Characteristics
on page 72
for parameters, and
Figure 16.3 on page 74
for timing diagrams.
相關(guān)PDF資料 |
PDF描述 |
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| S29GL032A100FFIR10 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR12 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR13 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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| S29GL032A100FFIR22 | 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL032A100FFIR10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR20 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
| S29GL032A100FFIR22 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology |
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