- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄374653 > S29AL016M90TFIR13 (SPANSION LLC) 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY PDF資料下載
參數(shù)資料
| 型號(hào)： | S29AL016M90TFIR13 |
| 廠商： | SPANSION LLC |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| 中文描述： | 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 |
| 封裝： | MO-142DD, LEAD FREE, TSOP-48 |
| 文件頁(yè)數(shù)： | 52/59頁(yè) |
| 文件大?。?/td> | 1917K |
| 代理商： | S29AL016M90TFIR13 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)第46頁(yè)第47頁(yè)第48頁(yè)第49頁(yè)第50頁(yè)第51頁(yè)當(dāng)前第52頁(yè)第53頁(yè)第54頁(yè)第55頁(yè)第56頁(yè)第57頁(yè)第58頁(yè)第59頁(yè)
53
S29AL016M
S29AL016M_00A4 April 21, 2004
Erase and Programming Performance
Notes:
1. Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0 V, 10,000 cycles, checkerboard data
pattern.
2. Under worst case conditions of 90°C, V
CC
= 2.7 V, 100,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Tables
2
–
3
for further information on command definitions.
TSOP Pin and BGA Package Capacitance
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
7.5
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
32
s
Byte Programming Time
18
μs
Word Programming Time
18
μs
Excludes system level
overhead (Note 5)
Chip Programming Time
(Note 3)
Byte Mode
36
s
Word Mode
19
s
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29AL016M90TFIR20 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90TFIR22 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M90TFIR23 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10FFI023 | 16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL016M10BAI013 | BCD-to-7 Segment Latch/Decoder/Driver for Liquid Crystals; Package: SOIC 16 LEAD; No of Pins: 16; Container: Tape and Reel; Qty per Container: 2500 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL016M90TFIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3.3V 16M-Bit 2M x 8/1M x 16 90ns 48-Pin TSOP Tray |
| S29AL016M90TFIR22 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 16MBIT 2MX8/1MX16 90NS 48TSOP - Tape and Reel |
| S29AL016M90TFIR23 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:16 MEGABIT (2M X 8 BIT / I M X 16 BIT) 3.0 VOLT ONLY BOOT SECTOR FLASH MEMORY |
| S29AL032D070TFI042 | 制造商:Spansion 功能描述:32M (X8/X16) 3V, BOT BOOT, TSOP48, IND, HAZMAT, T&R - Tape and Reel |
| S29AL032D70BAI000 | 制造商:Spansion 功能描述:NOR Flash Parallel 3.3V 32Mbit 4M x 8bit 70ns 48-Pin FBGA Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。