參數(shù)資料
型號(hào): S29AL016D90BAN012
廠商: SPANSION LLC
元件分類(lèi): PROM
英文描述: 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
封裝: 8.15 X 6.15 MM, FBGA-48
文件頁(yè)數(shù): 43/55頁(yè)
文件大?。?/td> 1809K
代理商: S29AL016D90BAN012
48
S29AL016D
S29AL016D_00_A7 November 27, 2007
Da ta
Sh e e t
Figure 17.13 Alternate CE# Controlled Write Operation Timings
Notes
1. PA = program address, PD = program data, DQ7# = complement of the data written to the device, DOUT = data written to the device.
2. Figure indicates the last two bus cycles of the command sequence.
3. Word mode address used as an example.
18. Erase and Programming Performance
Notes
1. Typical program and erase times assume the following conditions: 25
°C, V
CC = 3.0 V, 100,000 cycles, checkerboard data pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster
than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table 10.1
on page 30 for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.
tGHEL
tWS
OE#
CE#
WE#
RESET#
tDS
Data
tAH
Addresses
tDH
tCP
DQ7#
DOUT
tWC
tAS
tCPH
PA
Data# Polling
A0 for program
55 for erase
tRH
tWHWH1 or 2
RY/BY#
tWH
PD for program
30 for sector erase
10 for chip erase
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
tBUSY
Parameter
Unit
Comments
Sector Erase Time
0.7
10
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
25
s
Byte Programming Time
7
210
s
Excludes system level
overhead (Note 5)
Word Programming Time
7
210
s
Chip Programming Time
Byte Mode
11
33
s
Word Mode
7.2
21.6
s
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