參數(shù)資料
型號(hào)： S29AL004D
廠商： Spansion Inc.
英文描述： 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 4兆位（512 kX的8-Bit/256畝x 16位），3.0伏的CMOS只引導(dǎo)扇區(qū)閃存
文件頁(yè)數(shù)： 5/55頁(yè)
文件大?。?/td> 1481K
代理商： S29AL004D
February 18, 2005 S29AL004D_00_A1
S29AL004D
3
A d v a n c e I n f o r m a t i o n
General Description
The S29AL004D is a 4 Mbit, 3.0 volt-only Flash memory organized as 524,288
bytes or 262,144 words. The device is offered in 48-ball FBGA, 44-pin SO, and
48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the
byte-wide (x8) data appears on DQ7–DQ0. This device requires only a single, 3.0
volt V
CC
supply to perform read, program, and erase operations. A standard
EPROM programmer can also be used to program and erase the device.
This device is manufactured using Spansion’s 200nm process technology, and of-
fers all the features and benefits of the Am29LV400B and MBM29LV400T/BC,
which were manufactured using 320nm process technology.
The standard device offers access times of 70 and 90ns, allowing high speed mi-
croprocessors to operate without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable (WE#) and output enable
(OE#) controls.
The device requires only a
single 3.0 volt power supply
for both read and write
functions. Internally generated and regulated voltages are provided for the pro-
gram and erase operations.
The device is entirely command set compatible with the
JEDEC single-power-
supply Flash standard
. Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an in-
ternal state-machine that controls the erase and programming circuitry. Write
cycles also internally latch addresses and data needed for the programming and
erase operations. Reading data out of the device is similar to reading from other
Flash or EPROM devices.
Device programming occurs by executing the program command sequence. This
initiates the
Embedded Program
algorithm—an internal algorithm that auto-
matically times the program pulse widths and verifies proper cell margin. The
Unlock Bypass
mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates
the
Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed) before executing the
erase operation. During erase, the device automatically times the erase pulse
widths and verifies proper cell margin.
The host system can detect whether a program or erase operation is complete by
observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (tog-
gle)
status bits
. After a program or erase cycle is completed, the device is ready
to read array data or accept another command.
The
sector erase architecture
allows memory sectors to be erased and repro-
grammed without affecting the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection
measures include a low V
CC
detector that automat-
ically inhibits write operations during power transitions. The
hardware sector
protection
feature disables both program and erase operations in any combina-
tion of the sectors of memory. This can be achieved in-system or via
programming equipment.
相關(guān)PDF資料
PDF描述
S29AL004D90BAI012 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90BAI013 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90BAI020 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90BAI022 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90BAI023 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL004D55MAIR10 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 44SOP - Rail/Tube
S29AL004D55MAIR20 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 44SOP - Rail/Tube
S29AL004D55TAI010 制造商:Spansion 功能描述:
S29AL004D55TAI020 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
S29AL004D55TAIR10 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 4MBIT 512KX8/256KX16 55NS 48TSOP - Trays
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