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參數(shù)資料
| 型號： | S29AL004D90TFI022 |
| 廠商： | SPANSION LLC |
| 元件分類： | DRAM |
| 英文描述： | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| 中文描述： | FLASH 3V PROM, PDSO48 |
| 封裝： | LEAD FREE, TSOP-48 |
| 文件頁數(shù)： | 20/55頁 |
| 文件大?。?/td> | 1481K |
| 代理商： | S29AL004D90TFI022 |
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18
S29AL004D
S29AL004D_00_A1 February 18, 2005
A d v a n c e I n f o r m a t i o n
Hardware Data Protection
The command sequence requirement of unlock cycles for programming or erasing
provides data protection against inadvertent writes (refer to
Table on page 24
for command definitions). In addition, the following hardware data protection
measures prevent accidental erasure or programming, which might otherwise be
caused by spurious system level signals during V
CC
power-up and power-down
transitions, or from system noise.
Low V
CC
Write Inhibit
When V
CC
is less than V
LKO
, the device does not accept any write cycles. This pro-
tects data during V
CC
power-up and power-down. The command register and all
internal program/erase circuits are disabled, and the device resets. Subsequent
writes are ignored until V
CC
is greater than V
LKO
. The system must provide the
proper signals to the control pins to prevent unintentional writes when V
CC
is
greater than V
LKO
.
Write Pulse
Glitch
Protection
Noise pulses of less than 5 ns (typical) on OE#, CE# or WE# do not initiate a write
cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# = V
IL
, CE# = V
IH
or WE# =
V
IH
. To initiate a write cycle, CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = V
IL
and OE# = V
IH
during power up, the device does not accept
commands on the rising edge of WE#. The internal state machine is automatically
reset to reading array data on power-up.
Command Definitions
Writing specific address and data commands or sequences into the command
register initiates device operations.
Table on page 24
defines the valid register
command sequences. Writing
incorrect
address and data values
or writing
them in the
improper sequence
resets the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens
later. All data is latched on the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in
AC Characteristics on page 37
.
Reading Array Data
The device is automatically set to reading array data after device power-up. No
commands are required to retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the Erase
Suspend mode. The system can read array data using the standard read timings,
except that if it reads at an address within erase-suspended sectors, the device
outputs status data. After completing a programming operation in the Erase Sus-
pend mode, the system may once again read array data with the same exception.
See
Erase Suspend/Erase Resume Commands on page 22
for more information
on this mode.
相關(guān)PDF資料 |
PDF描述 |
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| S29AL004D90TFI023 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D70BAI010 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D70BAI012 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D70BAI013 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL004D70BAI020 | 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29AL004D90TFI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D_06 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D55BAI010 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
| S29AL008D55BAI011 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory |
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