參數(shù)資料
型號(hào): S29AL004D90TFI010
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
封裝: MO-142DD, LEAD FREE, TSOP-48
文件頁(yè)數(shù): 29/55頁(yè)
文件大?。?/td> 1481K
代理商: S29AL004D90TFI010
February 18, 2005 S29AL004D_00_A1
S29AL004D
27
A d v a n c e I n f o r m a t i o n
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that indicates whether an Em-
bedded Algorithm is in progress or complete. The RY/BY# status is valid after the
rising edge of the final WE# pulse in the command sequence. Since RY/BY# is an
open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ7–DQ0
Addr = VA
Read DQ7–DQ0
Addr = VA
DQ7 = Data
START
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 =
1
because
DQ7 may change simultaneously with DQ5.
Figure 5. Data# Polling Algorithm
相關(guān)PDF資料
PDF描述
S29AL004D90TFI012 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90TFI013 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90TFI020 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90TFI022 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D90TFI023 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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