參數(shù)資料
型號(hào)： S29AL004D70TAI023
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述： 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝： MO-142DD, TSOP-48
文件頁(yè)數(shù)： 3/55頁(yè)
文件大小： 1481K
代理商： S29AL004D70TAI023
Publication Number
S29AL004D_00
Revision
A
Amendment
1
Issue Date
February 18, 2005
ADVANCE
INFORMATION
S29AL004D
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-
powered applications
Manufactured on 200nm process technology
— Compatible with 320nm Am29LV400B and
MBM29LV400T/BC
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven
64 Kbyte sectors (byte mode)
— One 8 Kword, two 4 Kword, one 16 Kword, and seven
32 Kword sectors (word mode)
— Supports full chip erase
Unlock Bypass Program Command
— Reduces overall programming time when issuing
multiple program command sequences
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
preprograms and erases the entire chip or any
combination of designated sectors
— Embedded Program algorithm automatically writes
and verifies data at specified addresses
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
supply Flash
— Superior inadvertent write protection
Sector Protection features
— A hardware method of locking a sector to prevent any
program or erase operations within that sector
— Sectors can be locked in-system or via programming
equipment
— Temporary Sector Unprotect feature allows code
changes in previously locked sectors
Performance Characteristics
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical values
at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
Cycling Endurance: 1,000,000 cycles per
sector typical
Data Retention: 20 years typical
Package Options
48-ball FBGA
48-pin TSOP
44-pin SO
Software Features
Data# Polling and toggle bits
— Provides a software method of detecting program or
erase operation completion
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
program data to, a sector that is not being erased,
then resumes the erase operation
Hardware Features
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
erase cycle completion
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
data
相關(guān)PDF資料
PDF描述
S29AL004D70TFI010 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI012 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI013 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI020 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI022 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29AL004D70TFI010 制造商:Spansion 功能描述:IC, FLASH MEM, 4MBIT, 70NS, 48-TSOP, Memory Type:Flash - NOR, Memory Size:4Mbit,
S29AL004D70TFI010H 制造商:Spansion 功能描述:
S29AL004D70TFI012 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI013 制造商:SPANSION 制造商全稱:SPANSION 功能描述:4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI020 制造商:Spansion 功能描述:SPZS29AL004D70TFI020 4M FL MEM EOL160610 制造商:Spansion 功能描述:IC,EEPROM,NOR FLASH,256KX16/512KX8,CMOS,TSSOP,48PIN,PLASTIC
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