參數(shù)資料
型號: S29AL004D70TAI020
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
中文描述: 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: MO-142DD, TSOP-48
文件頁數(shù): 51/55頁
文件大?。?/td> 1481K
代理商: S29AL004D70TAI020
February 18, 2005 S29AL004D_00_A1
S29AL004D
49
A d v a n c e I n f o r m a t i o n
2. Under worst case conditions of 90°C, V
CC
= 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most
bytes program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program
command. See
Table on page 24
for further information on command definitions.
6. The device has a minimum erase and program cycle endurance of 100,000 cycles per sector
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A
= 25°C, f = 1.0 MHz.
Table 16. TSOP, SO, And BGA Pin Capacitance
Parameter
Symbol
Parameter Description
Test Setup
Package
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP, SO
6
7.5
pF
BGA
4.2
5.0
C
OUT
Output Capacitance
V
OUT
= 0
TSOP, SO
8.5
12
BGA
5.4
6.5
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP, SO
7.5
9
BGA
3.9
4.7
相關(guān)PDF資料
PDF描述
S29AL004D70TAI022 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TAI023 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI010 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI012 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
S29AL004D70TFI013 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
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