參數(shù)資料
型號: S25FL002D0FNFI013
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
中文描述: 2M X 1 SPI BUS SERIAL EEPROM, PDSO8
封裝: 6 X 5 MM, LEAD FREE, WSON-8
文件頁數(shù): 25/38頁
文件大?。?/td> 892K
代理商: S25FL002D0FNFI013
June 9, 2004 30167A+1
S25FL Family (Serial Peripheral Interface)
25
P r e l i m i n a r y I n f o r m a t i o n
tional clock cycles on Serial Clock (SCK), while Chip Select (CS#) is driven Low,
causes the Electronic Signature to be output repeatedly.
When Chip Select (CS#) is driven High, the device is put in the Stand-by Power
mode. If the device was not previously in the Software Protect mode, which oc-
curs when the Read ID (READ_ID) instruction is initiated, the transition to the
Stand-by Power mode is immediate. If the device was previously in the Software
Protect mode, though, the transition to the Standby mode is delayed by t
RES
, and
Chip Select (CS#) must remain High for at least t
RES(max)
, as specified in Table
9
. Once in the Stand-by Power mode, the device waits to be selected, so that it
can receive, decode and execute instructions.
Figure 16. Release from Software Protection and Read Electronic Signature (RES), and Read ID (READ_ID)
Instruction Sequence
CS#
SCK
SI
SO
3 Dummy
Bytes
High Impedance
MSB
Software Protect Mode
Standby Mode
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31 32
33 34 35 36
37 38
Electronic ID out
Instruction
t
RES
23 22 21
3
2
1
0
7
6
5
4
3
2
1
0
MSB
相關PDF資料
PDF描述
S25FL001D0FMAI013 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL001D0FMFI001 INDUCTOR,STANDARD WOUND,0806,22UH 10% ,T&R RoHS Compliant: Yes
S25FL001D0FMFI003 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL001D0FMFI011 2 Megabit, 1 Megabit CMOS 3.0 Volt Flash Memory with 25 MHz SPI Bus Interface
S25FL001D0FMFI013 INDUCTOR,STANDARD WOUND,0806,47UH 10% ,T&R RoHS Compliant: Yes
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