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參數資料
| 型號： | S2516MH |
| 廠商： | 意法半導體 |
| 英文描述： | SCR |
| 中文描述： | 可控硅 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | S2516MH |
P
G (AV)
= 1W P
GM
=10 W (tp = 20
μ
s)
I
GM
= 4A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
60
°
C/W
Rth(j-c)
Junctionto case for DC
1.6
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
14
16
I
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
MIN
30
20
mA
MAX
75
50
V
GT
V
D
=12V (DC) R
L
=33
Tj= 25
°
C
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
Tj= 125
°
C
MIN
0.2
V
tgt
V
D
=V
DRM
dI
G
/dt = 1.5A/
μ
s
I
TM
= 3 x I
T(AV
)
I
G
= 200mA
Tj= 25
°
C
TYP
2
μ
s
I
H
I
T
= 500mA Gate open
Tj= 25
°
C
MAX
115
100
mA
I
L
I
G
=1.2 I
GT
Tj= 25
°
C
MAX
230
200
mA
V
TM
I
TM
= 50A tp= 380
μ
s
Tj= 25
°
C
MAX
1.6
V
I
DRM
I
RRM
V
D
=V
DRM
V
R
=V
RRM
Tj= 25
°
C
MAX
10
μ
A
Tj= 110
°
C
MAX
2.5
mA
dV/dt
V
D
=67%V
DRM
Gateopen
Tj= 110
°
C
MIN
750
500
V/
μ
s
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=25A/
μ
s
dV/dt=25V/
μ
s
V
D
= 67%V
DRM
tp=100
μ
s
Tj= 110
°
C
MAX
100
μ
s
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
S
25
16
M
H
SCR MESAGLASS
CURRENT
PACKAGE:
H =TO220 Non-insulated
VOLTAGE
SENSITIVITY
S25xxxH
2/5
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