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參數(shù)資料
| 型號： | S10317 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Photo IC for laser beam synchronous detection Low voltage operation (3.3 V) |
| 中文描述： | 圖片集成電路激光同步檢測低電壓操作（3.3伏） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 64K |
| 代理商： | S10317 |
Photo IC for laser beam synchronous detection
S10317 series
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesv
gen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. 2007 Hamamatsu Photonics K.K.
Cat. No. KPIC1067E0
2
A
ug
. 2007 DN
2
0.66
3.2 ± 0.2
(INCLUDING BURR)
3.0 *
1.0 ± 0.4
1.0 ± 0.4
0.05
2.4
MIRRANGE
0
2.8
2.9
3.0 *
0.45 ± 0.3
3.0 *
3
M
R
3
3
4
4
4
5.0 ± 0.3
0.45 ± 0.3
0.35
0.75
1.3
0
0
0
(
×
)
(
×
)
0.5
PHOTOSENSITIVE
SURFACE
Tolerance unless otherwise noted: ±0.1, ±2
Shaded area indicates burr.
Chip position accuracy with respect to the
package dimensions marked *
X, Y
≤
±0.2,
θ
≤
±2
Vcc
NC
OUT
GND
Ro
GND
GND
GND
GND
PHOTOSENSITIVE
SURFACE
2
0
CENTER OF
ACTIVE AREA
I
Dimensional outline (unit: mm)
KPICC0127EA
I
Block diagram
Vcc
0.1
μ
F
3.3 V
CURRENT
EXTERNAL
GAIN RESISTANCE
Ro
Vo
Ro
PD
Vref
GND
I
Function
S10317 series photo IC integrates a photodiode chip and an IC chip into the same package. The photodiode chip is internally
connected to the IC chip as shown in the block diagram. S10317 series should be used with terminal Ro connected to an external
gain resistance Ro.
A photocurrent is generated when a laser beam enters the photodiode. This photocurrent is fed to the input terminal of the IC and,
after being amplified by the current amplifier, flows to the external gain resistance. At this time, voltages V
RO
at terminal Ro is
given by the following expression.
V
RO
=A × S × P
I
× Ro [V] ·········· (1)
A: Current amplifier gain (S10317: 20 times, S10317-01: 6 times)
S: Photodiode sensitivity [A/W] (approx. 0.44 A/W at 780 nm)
P
I
: Input power [W]
Ro: External gain resistance [
]; usable range 2 k
to 10 k
V
RO
is input to the internal comparator and compared with the internal reference voltage Vref (approx. 0.8 V) so the output Vo is
“High” when V
RO
< Vref or “Low” when V
RO
> Vref.
In equatin (1), set the Ro value so that V
RO
is 2 to 3 V.
(Monitoring V
RO
shows that it is limited to about 2 V (with respect to GND) by the voltage limiting circuit. Keep this in mind when
monitoring.)
KPICA0070EB
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