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參數(shù)資料
| 型號(hào)： | S10127 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Diode; Antenna switching; VR (V): 30; IF (mA): 100; Pd (mW): 100; rf (ohm) max: 1.3; Condition IF at rf (mA): 10; Condition f at rf (MHz): 100; VF (V) max: 1; Condition IF at VF (mA): 10; C (pF) max: 0.35; Condition VR at C (V): 1; Condition f at C (MHz): 1; Package: MP6 |
| 中文描述： | 防治荒漠化領(lǐng)域的圖像傳感器前端照明傅里葉變換的CCD用于X射線成像 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 174K |
| 代理商： | S10127 |
CCD area image sensor
S8982, S10127
......
.
1
V
V
V
V
V
2
3
1
1
1
1
1
2
9
9
1
D
D
S
S
S
S
S
S
S
S
S
S
S
S
D
D
......
X-RAY IRRADIATION
MONITORING PHOTODIODE
PD
P1V
’
P2V
’
TG
’
SS
RG
’
OG
SG
’
P1H
’
P2H
’
OS
OD
RD
3
I
Electrical and optical characteristics (Ta=25 °C, unless otherwise noted, V
OD
=15 V)
Parameter
Vertical
Horizontal
Full well capacity
Summing
CCD node sensitivity
Dark current (MPP mode)
Readout noise
Dynamic range
X-ray response non-uniformity
White spots
Point
defects *
12
Black spots
Cluster defects
Column defects
X-ray resolution
*5: V
OD
=15 V, R
L
(load resistance of emitter follower)=1 k
.
*6: Dark signal doubles for every 5 to 7 °C.
*7: -40 °C, operating frequency is 1 MHz.
*8: Dynamic range = Full well capacity / Readout noise
*9: X-ray irradiation of 60 kVp, measured at half of the full well capacity.
*10: XRNU (%) = Noise / Signal × 100
Noise: Fixed pattern noise (peak to peak)
In the range that excludes 5 pixels from edges to the center at every position.
*11: Refer to “Characteristics and use of FFT-CCD area image sensor” of technical information.
*12: White spots > 10 times of Max. Dark signal (2,500 e
-
/pixel/s).
Black spots > 50 % reduction in response relative to adjacent pixels, measured at half of the full well capacity.
*13: continuous 2 to 9 point defects.
*14: continuous > 10 point defects.
Symbol
Remark
Min.
100
-
-
1.0
-
-
-
-
-
-
-
-
8
Typ.
200
300
600
1.4
250
60
3333
±10
-
-
-
-
10
Max.
-
-
-
-
2,500
-
-
±30
20
20
3
1
-
Unit
Fw
ke
-
Sv
DS
Nr
DR
XRNU
*
5
*
6
*
7
*
8
*
9,
*
10
μV/e
-
e
-
/pixel/s
e
-
rms
-
%
*
13
*
14
*
9
Blemish *
11
-
-
R
Lp/mm
I
Device structure
KMPDC0163EA
I
Pixel format
←
Left Horizontal Direction
→
Right
Blank
Optical
black
2
Isolation
Effective
Isolation
Optical
black
0
Blank
2
1
1500
1
2
Top
←
Vertical direction
→
Bottom
Isolation
Effective
1
Isolation
1
1000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S10K115 | ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES |
| S10K130 | ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES |
| S10K140 | ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES |
| S10K175 | ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES |
| S10K230 | ELECTRICAL SPECIFICATIONS, CONT. DISC TYPES |
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