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參數(shù)資料
| 型號： | S0602xH |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Sensitive Gate SCR(硅控整流管) |
| 中文描述： | 靈敏柵極可控硅（硅控整流管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 61K |
| 代理商： | S0602XH |
P
G (AV)
= 0.5W P
GM
= 5 W (tp = 20
μ
s)
I
GM
=2 A (tp = 20
μ
s)
GATE CHARACTERISTICS
(maximumvalues)
Symbol
Parameter
Value
Unit
Rth(j-a)
Junctionto ambient
60
°
C/W
Rth(j-c)
Junctionto case for DC
4
°
C/W
THERMAL RESISTANCES
Symbol
Test Conditions
Sensitivity
Unit
02
I
GT
V
D
=12V (DC) R
L
=140
Tj= 25
°
C
MAX
200
μ
A
V
GT
V
D
=12V (DC) R
L
=140
Tj= 25
°
C
MAX
1.5
V
V
GD
V
D
=V
DRM
R
L
=3.3k
R
GK
= 1K
Tj= 125
°
C
MIN
0.1
V
V
RGM
I
RG
=10
μ
A
Tj= 25
°
C
MIN
8
V
tgd
V
D
=V
DRM
dI
G
/dt = 0.1A/
μ
s
I
TM
= 3 x I
T(AV
)
I
G
= 10mA
Tj= 25
°
C
TYP
0.5
μ
s
I
H
I
T
= 50mA R
GK
= 1 K
Tj= 25
°
C
MAX
10
mA
I
L
I
G
=1mA R
GK
= 1K
Tj= 25
°
C
MAX
20
mA
V
TM
I
TM
= 12A tp= 380
μ
s
Tj= 25
°
C
MAX
1.6
V
I
DRM
I
RRM
V
D
=V
DRM
R
GK
= 1K
V
R
=V
RRM
Tj= 25
°
C
MAX
5
μ
A
Tj= 110
°
C
MAX
500
μ
A
dV/dt
V
D
=67%V
DRM
R
GK
=1 K
Tj= 110
°
C
TYP
10
V/
μ
s
tq
I
TM
= 3 x I
T(AV
) V
R
=35V
dI/dt=10A/
μ
s
dV/dt=2V/
μ
s
V
D
= 67%V
DRM
R
GK
=1 K
tp=100
μ
s
Tj= 110
°
C
MAX
100
μ
s
ELECTRICALCHARACTERISTICS
ORDERING INFORMATION
S
06
02
M
H
SCR MESAGLASS
CURRENT
PACKAGE:
H =TO220 Non-insulated
VOLTAGE
SENSITIVITY
S0602xH
2/5
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