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參數(shù)資料
| 型號(hào)： | S-93C66A |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | High Speed, Low Power 4K-bit EEPROM(高速，低功耗4K位串行EEPROM) |
| 中文描述： | 高速，低功耗4K的位元的EEPROM（高速，低功耗4K的位串行EEPROM的） |
| 文件頁(yè)數(shù)： | 39/53頁(yè) |
| 文件大?。?/td> | 214K |
| 代理商： | S-93C66A |
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38
Power-voltage activation time
E
t
i
1m
1
μ
100
μ
10
μ
10m 100m
1
μ
10
μ
100
μ
1m
10m
100m
t
rise
(seconds)
Fig. 3 EEPROM initialization time
When the power-on clear circuit has finished initialization normally, the EEPROM enters a program-
disabled state. If the power-on clear circuit does not operate, the following situation is likely:
-
In some cases, a previously entered command has been enabled. If, for example, a program-
enabled command has been enabled and the input terminal mistakenly recognizes a write command
due to extraneous noise while the next command is being entered, writing may be executed.
The following may prevent the power-on clear circuit from operating:
-
If the power lines of the microcomputer and EEPROM are separated from each other, and the output
terminals of the microcomputer and EEPROM are wired or connected to each other, there may be a
potential difference between the power lines of the EEPROM and microcomputer. If the voltage of
the microcomputer is higher, a current may flow from the output terminal of the microcomputer to the
power line of the EEPROM via a parasitic diode in the DO pin of the EEPROM. Therefore, the power
voltage of the EEPROM has an intermediate potential to prevent power-on from being cleared.
-
During an access to the EEPROM, the voltage may decrease due to power-off. Even if the
microcomputer has been reset due to a decrease in voltage, the EEPROM may malfunction if
EEPROM power-on clear operation conditions are not met. For the EEPROM power-on clear
operation conditions, see “Method for Activating the Power Voltage.”
<Remarks>
FAQ No.: 12011
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| S-93C66ADFJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS SERIAL E2PROM |
| S-93C66ADFJ-TB | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K (256X16) Hi-Speed RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| S-93C66ADP | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K (256X16) Hi-Speed RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| S-93C66AFJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS SERIAL E2PROM |
| S-93C66AFJ-TB | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K (256X16) 3-Wire RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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