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參數(shù)資料
| 型號(hào)： | S-8327 |
| 廠商： | Seiko Instruments Inc. |
| 英文描述： | CMOS PWM-Control Step-Up Switching Regulator(External Transistor)(CMOS PFM（頻率脈沖調(diào)制）控制步升開關(guān)穩(wěn)壓器) |
| 中文描述： | 的CMOS脈寬調(diào)制控制升壓開關(guān)穩(wěn)壓器（外部晶體管）（烤瓷的CMOS（頻率脈沖調(diào)制）控制步升開關(guān)穩(wěn)壓器） |
| 文件頁數(shù)： | 16/65頁 |
| 文件大?。?/td> | 569K |
| 代理商： | S-8327 |
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SMALL PACKAGE PWM CONTROL STEP-UP SWITCHING REGULATOR
S-8323/8327 Series
Seiko Instruments Inc.
15
2. Diode
Use an external diode that meets the following requirements:
Low forward voltage:
(V
F
<0.3V)
High switching speed: (500 ns max.)
Reverse voltage:
V
OUT
+V
F
or more
Rated current:
I
PK
or more
3. Capacitors (C
IN
, C
OUT
)
A capacitor at the input side (C
IN
) improves the efficiency by reducing the power impedance and stabilizing the input current.
Select a C
IN
value according to the impedance of the power supply used. The capacitor value should be around 10
μ
F.
A capacitor at the output side (C
OUT
) is used for smoothing the ripple voltage. Therefore select a capacitor with a small ESR
(Electric Series Resistance) and a large capacitance. The capacitor value should be 10
μ
F min. A tantalum electrolytic
capacitor and an organic semiconductor capacitor are especially recommended because of their superior low-temperature
characteristic and leakage current characteristic.
4. External transistor (S-8327 Series)
For the S-8327 Series, connecting an external transistor increases the output current. A bipolar (NPN) transistor or an
enhancement (N-channel) MOS FET transistor can be used as external transistor.
4.1. Bipolar (NPN) transistor
A circuit example using a bipolar transistor (NPN), Sanyo 2SD1628G (h
FE
=280 to 560) is shown in Figure 11. The h
FE
value and the Rb value determine the driving capacity to increase the output current using a bipolar transistor. A
peripheral circuit example of the transistor is shown in Figure 8.
1 k
is recommended for Rb. Rb is caluculated from the following formula:
Rb=V
Ib=IPK/h
FE
A small Rb increases output current, however, the efficiency decreases.
The current flows pulsating and there is voltage drop due to wiring resistance in an actual circuit, therefore optimum Rb
value should be determined by experiment.
A speed-up capacitor connected in parallel with Rb resistance as shown in Figure 9 decreases the switching loss and
improves the efficiency.
Cb is caluculated from the following formula:
Cb
≤
V
OUT
Pch
I
PK
EXT
Nch
Rb
S-8327
Figure 8 External transistor
2200pF
2
π
×
Rb
×
f
OSC
×
0.7
1
Ib
|I
EXTH
|
OUT
- 0.7
0.4
Cb
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