參數(shù)資料
      型號(hào): S-80808CLNB-B9A-T2
      廠商: Seiko Instruments Inc.
      英文描述: ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
      中文描述: 超小型封裝高精度電壓檢測(cè)器
      文件頁(yè)數(shù): 16/54頁(yè)
      文件大?。?/td> 672K
      代理商: S-80808CLNB-B9A-T2
      ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
      S-808xxC Series
      Rev.3.2
      _00
      16
      Seiko Instruments Inc.
      2. CMOS Output Products
      2-1. Detection Voltage Typ.1.4 V or Less Products
      Table 16
      (Ta
      =
      25
      °
      C unless otherwise specified)
      Item
      Symbol
      Condition
      Min.
      Typ.
      Max.
      Unit
      Test
      circuit
      Detection voltage
      *1
      V
      DET
      V
      DET(S)
      ×
      0.98
      0.802
      0.910
      1.017
      1.125
      1.232
      1.340
      1.448
      0.018
      0.028
      0.037
      0.047
      0.056
      0.066
      0.076
      0.65
      V
      DET(S)
      0.834
      0.944
      1.054
      1.164
      1.273
      1.383
      1.493
      0.034
      0.044
      0.054
      0.064
      0.073
      0.083
      0.093
      1.3
      1.3
      V
      DET(S)
      ×
      1.02
      0.867
      0.979
      1.091
      1.203
      1.315
      1.427
      1.538
      0.051
      0.061
      0.071
      0.081
      0.091
      0.101
      0.110
      3.5
      3.5
      5.0
      V
      1
      Release voltage
      Hysteresis width
      Current consumption
      Operating voltage
      +
      V
      DET
      V
      HYS
      I
      SS
      V
      DD
      S-80808
      S-80809
      S-80810
      S-80811
      S-80812
      S-80813
      S-80814
      S-80808
      S-80809
      S-80810
      S-80811
      S-80812
      S-80813
      S-80814
      V
      DD
      =
      1.5 V
      V
      DD
      =
      2.0 V
      S-80808 to 09
      S-80810 to 14
      μ
      A
      V
      2
      1
      Output current
      I
      OUT
      Output transistor,
      Nch, V
      DS
      =
      0.5 V, V
      DD
      =
      0.7 V
      Output transistor,
      Pch, V
      DS
      =
      2.1 V, V
      DD
      =
      4.5 V
      0.04
      0.2
      mA
      3
      2.9
      5.8
      4
      Response time
      Detection voltage
      temperature
      coefficient
      *2
      *1.
      V
      DET
      : Actual detection voltage value,
      V
      DET(S)
      : Specified detection voltage value (The center value of the
      detection voltage range in
      Table 3 to 4
      .)
      *2.
      The temperature change ratio in the detection voltage [mV/°C] is calculated by using the following equation.
      [
      Ta
      Ta
      *1.
      Temperature change ratio of the detection voltage
      *2.
      Specified detection voltage
      *3.
      Detection voltage temperature coefficient
      t
      PLH
      60
      μ
      s
      1
      DET
      DET
      V
      Ta
      V
      Ta
      =
      40
      °
      C to
      +
      85
      °
      C
      ±
      100
      ±
      350
      ppm/
      °
      C
      ]
      (
      )
      [ ]
      V
      [
      ]
      1000
      C
      ppm/
      V
      V
      Typ.
      V
      C
      mV/
      V
      DET
      DET
      DET(S)
      DET
      ÷
      °
      ×
      =
      °
      3
      *
      2
      *
      *1
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